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CAT8900D125TBGT3

Onsemi

CAT8900D125TBGT3 by Onsemi

CAT8900D125TBGT3 by Onsemi is a 3-terminal voltage reference with Vsup of 2.7-5.5V, output voltage of 1.245-1.255V, and temp coef of 50 ppm/°C. Ideal for industrial applications requiring precise voltage regulation in compact designs due to its small outline, thin profile package shape.

Median Price

$0.320

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 2,805 parts In-Stock

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Verical

USA . 2,805 parts In-Stock

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Digiode

USA . 2,009 parts In-Stock

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$0.304

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J2 Sourcing AB

Sweden . 9,000 parts In-Stock

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Vyrian

USA . 5,540 parts In-Stock

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Bristol Electronics

USA . 125 parts In-Stock

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Microfarads

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Corphita

USA . 1,151 parts In-Stock

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$0.288

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Corohmni

South Africa . 161 parts In-Stock

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Native Components

USA . 545 parts In-Stock

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$7.890

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Northwest PG Solutions

USA . 2,326 parts In-Stock

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$8.679

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$7.811

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AZTECH Wire

Italy . 271 parts In-Stock

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$12.180

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Problanco Electronics

Mexico . 7,707 parts In-Stock

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TANS Electronics

Latvia . 7,083 parts In-Stock

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SupplyDigital Components

Austria . 4,871 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 886 parts In-Stock

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Microchip USA

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Overview

Experience the unparalleled precision and reliability of the CAT8900D125TBGT3 voltage reference by Onsemi. Crafted with top-notch materials and cutting-edge technology, this small outline, thin profile device offers a nominal output voltage of 1.25V with minimal variance. Ideal for industrial applications, this three-terminal voltage reference ensures stable performance even in extreme temperatures. Trust Onsemi's proven track record of excellence and elevate your projects with the CAT8900D125TBGT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and lightweight material, suitable for a variety of applications.

Surface Mount: YES

Allows for easy and compact mounting on circuit boards.

Nominal Supply Voltage (Vsup): 3 V

Provides a stable reference voltage for electronic circuits operating at 3V.

Maximum Operating Temperature: 85 °C

Can withstand high temperature environments, suitable for industrial applications.

Minimum Output Voltage: 1.245 V

Provides precise and accurate output voltage for voltage reference purposes.

Terminal Finish: NICKEL PALLADIUM GOLD

Ensures good conductivity and corrosion resistance for reliable performance.

Width (mm): 1.3 mm

Compact size enables space-efficient design and integration into electronic devices.

Minimum Supply Voltage (Vsup): 2.7 V

Works with a range of supply voltages, offering flexibility in circuit design.

Temperature Grade: INDUSTRIAL

Designed to operate in harsh industrial environments without compromising performance.

Maximum Supply Current (Isup): 0.0008 mA

Low power consumption for energy-efficient operation.

Technical Specifications

Voltage References CAT8900D125TBGT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.01 A

Maximum Output Voltage:

1.255 V

Minimum Output Voltage:

1.245 V

Nominal Output Voltage:

1.25 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Maximum Supply Current (Isup):

.0008 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Max Voltage Temp Coef:

50 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Maximum Voltage Tolerance:

.4 %

Width (mm):

1.3 mm

Trade Compliance

CAT8900D125TBGT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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