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CAT8900A260TBIT3

Onsemi

CAT8900A260TBIT3 by Onsemi

CAT8900A260TBIT3 by Onsemi is a 3-terminal voltage reference with Vsup range of 2.7-5.5V, output voltage of 2.5995-2.6005V, and temp coef of 20 ppm/°C. Ideal for industrial applications requiring precise voltage regulation in compact designs due to its small outline package and low profile design.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,579 parts In-Stock

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1,579

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Digiode

USA . 1,388 parts In-Stock

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1,388

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 249 parts In-Stock

1+ parts

$429.097

100+ parts

$420.515

1k+ parts

$416.224

10k+ parts

$411.933

249

$429.097

$420.515

$416.224

$411.933

Northwest PG Solutions

USA . 2,232 parts In-Stock

1+ parts

$472.007

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$472.007

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TANS Electronics

Latvia . 7,721 parts In-Stock

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7,721

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SupplyDigital Components

Austria . 4,478 parts In-Stock

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4,478

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Kulean Microsystems

USA . 2,189 parts In-Stock

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Corphita

USA . 2,164 parts In-Stock

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Problanco Electronics

Mexico . 1,156 parts In-Stock

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UHIMA Technologies

Türkiye . 783 parts In-Stock

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Corohmni

South Africa . 293 parts In-Stock

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Overview

Elevate your voltage referencing needs with the CAT8900A260TBIT3 by Onsemi. Crafted with precision and reliability in mind, this voltage reference device boasts top-notch quality and performance that sets it apart from the rest. Ideal for a wide range of industrial applications, this small outline, low profile component offers a stable output voltage of 2.6V with minimal temperature coefficient. Trust Onsemi's expertise to deliver exceptional value and benefits to your projects with the CAT8900A260TBIT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the internal components, ensuring durability and reliability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage (Vsup): 3 V

Suitable for a wide range of electronic applications requiring a 3V reference voltage.

No. of Terminals: 3

Simplifies the connection process and reduces the risk of errors in wiring.

Maximum Operating Temperature: 85 °C

Ensures stable performance even in high-temperature environments.

Minimum Output Voltage: 2.5995 V

Provides precise and stable output voltage for various electronic circuits.

Minimum Operating Temperature: -40 °C

Capable of functioning reliably in extreme low-temperature conditions.

Maximum Output Voltage: 2.6005 V

Provides a very close match to the nominal output voltage, ensuring accurate performance.

Maximum Seated Height: 1.22 mm

Compact size allows for integration into space-constrained designs.

Temperature Grade: INDUSTRIAL

Suitable for industrial applications with varying temperature conditions.

Max Voltage Temp Coef: 20 ppm/°C

Maintains voltage stability over a wide range of operating temperatures.

Nominal Output Voltage: 2.6 V

Provides a reliable and accurate reference voltage for electronic systems.

Technical Specifications

Voltage References CAT8900A260TBIT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

2.6005 V

Minimum Output Voltage:

2.5995 V

Nominal Output Voltage:

2.6 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.22 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Max Voltage Temp Coef:

20 ppm/Cel

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900A260TBIT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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