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CAT8900A102TBIT3

Onsemi

CAT8900A102TBIT3 by Onsemi

CAT8900A102TBIT3 by Onsemi is a 3-terminal voltage reference with Vsup range of 2.7-5.5V, output voltage of 1.0235-1.0245V, and temp coef of 20 ppm/°C. Ideal for industrial applications requiring precise voltage regulation in compact spaces due to its small outline package and low profile design.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,444 parts In-Stock

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Vyrian

USA . 614 parts In-Stock

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Northwest PG Solutions

USA . 47 parts In-Stock

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$2.912

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Problanco Electronics

Mexico . 6,352 parts In-Stock

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SupplyDigital Components

Austria . 5,612 parts In-Stock

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TANS Electronics

Latvia . 3,129 parts In-Stock

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Kulean Microsystems

USA . 1,982 parts In-Stock

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Corphita

USA . 1,043 parts In-Stock

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Corohmni

South Africa . 417 parts In-Stock

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Native Components

USA . 82 parts In-Stock

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UHIMA Technologies

Türkiye . 55 parts In-Stock

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Overview

Unlock precision and reliability with the CAT8900A102TBIT3 voltage reference by Onsemi. Crafted from high-quality materials, this small outline, low-profile package offers a seamless integration into various applications. With a wide temperature range and industrial-grade performance, this three-terminal voltage reference ensures stable output voltage for your projects. Experience peace of mind knowing that Onsemi's expertise and innovation are at the heart of every design, providing unparalleled value and benefits to our customers.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good durability and protection for the voltage reference, ensuring long-term reliability.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving space and enabling efficient PCB design.

Nominal Supply Voltage (Vsup): 3 V

Matches common supply voltages in electronic devices, making it compatible with a wide range of applications.

Maximum Operating Temperature: 85 °C

Offers high temperature tolerance, suitable for industrial environments where elevated temperatures may be present.

Maximum Output Voltage: 1.0245 V

Provides a stable and accurate output voltage, crucial for precise voltage referencing in electronic circuits.

Terminal Pitch: 0.95 mm

Compact terminal pitch allows for high-density mounting on PCBs, ideal for space-constrained electronic designs.

Temperature Grade: INDUSTRIAL

Designed to meet industrial standards for temperature ranges, ensuring reliable performance in harsh operating conditions.

Technical Specifications

Voltage References CAT8900A102TBIT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

1.0245 V

Minimum Output Voltage:

1.0235 V

Nominal Output Voltage:

1.024 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.22 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Max Voltage Temp Coef:

20 ppm/Cel

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900A102TBIT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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