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CAT8900B102TBIT3

Onsemi

CAT8900B102TBIT3 by Onsemi

CAT8900B102TBIT3 by Onsemi is a 3-terminal voltage reference with Vsup ranging from 2.7V to 5.5V. It offers an output voltage of 1.023-1.025V, with a low temp coefficient of 20 ppm/°C, suitable for industrial applications requiring precise voltage regulation in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,333 parts In-Stock

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2,333

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Vyrian

USA . 1,051 parts In-Stock

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1,051

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Distributors (Availability)

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Northwest PG Solutions

USA . 876 parts In-Stock

1+ parts

$2.923

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876

$2.923

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SupplyDigital Components

Austria . 7,422 parts In-Stock

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7,422

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Kulean Microsystems

USA . 7,356 parts In-Stock

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7,356

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TANS Electronics

Latvia . 4,470 parts In-Stock

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4,470

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Problanco Electronics

Mexico . 3,429 parts In-Stock

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3,429

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Corphita

USA . 2,186 parts In-Stock

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2,186

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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476

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Native Components

USA . 443 parts In-Stock

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$2.577

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443

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Corohmni

South Africa . 124 parts In-Stock

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Overview

Elevate your electronic designs with the CAT8900B102TBIT3 by Onsemi - a voltage reference that embodies unparalleled quality and reliability. Manufactured by Onsemi, a trusted leader in the industry, this product offers precise output voltage for a wide range of applications. With its compact design and advanced features, this voltage reference ensures superior performance, making it ideal for industrial-grade projects. Experience the value and benefits of Onsemi's CAT8900B102TBIT3, where innovation meets excellence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product suitable for various applications.

Surface Mount: YES

Allows for easy and convenient mounting on PCBs, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 3 V

Stable and reliable supply voltage for consistent performance.

Maximum Operating Temperature: 85 °C

Can operate effectively in a wide range of temperature conditions, suitable for industrial environments.

Minimum Output Voltage: 1.023 V

Provides a precise and accurate output voltage, critical for voltage reference applications.

Terminal Position: DUAL

Dual terminal position for easy and secure connection to the circuit, enhancing reliability.

Width (mm): 1.3 mm

Compact width allows for efficient use of space on the PCB.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage requirement for flexibility in power supply options.

Temperature Grade: INDUSTRIAL

Designed to withstand industrial temperature conditions, ensuring reliability in harsh environments.

Terminal Form: GULL WING

Gull wing terminal form for easy soldering and secure connection to the PCB.

Max Voltage Temp Coef: 20 ppm/°C

Low temperature coefficient for stable output voltage over temperature variations.

Nominal Output Voltage: 1.024 V

Precise output voltage for accurate voltage reference applications.

Technical Specifications

Voltage References CAT8900B102TBIT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

1.025 V

Minimum Output Voltage:

1.023 V

Nominal Output Voltage:

1.024 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.22 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Max Voltage Temp Coef:

20 ppm/Cel

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900B102TBIT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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