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CAT8900A300TBGT3

Onsemi

CAT8900A300TBGT3 by Onsemi

CAT8900A300TBGT3 by Onsemi is a 3-terminal voltage reference with nominal output voltage of 3V. It operates in industrial temperature range from -40 to 85 °C, suitable for various applications. With small outline and thin profile package style, it offers precise voltage regulation for electronics.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,078 parts In-Stock

1+ parts

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2,078

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Vyrian

USA . 1,022 parts In-Stock

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1,022

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 311 parts In-Stock

1+ parts

$429.097

100+ parts

$420.515

1k+ parts

$416.224

10k+ parts

$411.933

311

$429.097

$420.515

$416.224

$411.933

Northwest PG Solutions

USA . 1,695 parts In-Stock

1+ parts

$472.007

100+ parts

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1,695

$472.007

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Kulean Microsystems

USA . 7,404 parts In-Stock

1+ parts

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7,404

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TANS Electronics

Latvia . 6,614 parts In-Stock

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6,614

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SupplyDigital Components

Austria . 5,136 parts In-Stock

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5,136

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Problanco Electronics

Mexico . 5,014 parts In-Stock

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5,014

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Corphita

USA . 1,196 parts In-Stock

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1,196

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UHIMA Technologies

Türkiye . 934 parts In-Stock

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934

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Corohmni

South Africa . 197 parts In-Stock

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197

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Overview

Upgrade your voltage reference needs with the CAT8900A300TBGT3 by Onsemi. Manufactured by a trusted name in the industry, this product offers reliable performance and accuracy for a variety of applications. With its compact size and advanced features, this voltage reference provides unparalleled value to customers seeking precision and stability in their designs. Trust Onsemi to deliver quality products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers good durability and protection for the internal components of the voltage reference, making it a reliable choice for long-term use.

Surface Mount: YES

Being surface mountable allows for easy and convenient integration into circuit boards, saving space and simplifying the overall design.

Nominal Supply Voltage (Vsup): 3 V

The nominal supply voltage of 3V ensures compatibility with a wide range of electronic systems, making it a versatile option for various applications.

Maximum Operating Temperature: 85 °C

With a high maximum operating temperature of 85 °C, this voltage reference can withstand challenging environmental conditions without compromising performance.

Minimum Output Voltage: 2.9995 V

The minimum output voltage ensures precision and stability in voltage regulation, making it suitable for applications that require accurate voltage references.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature of -40 °C allows for reliable performance even in harsh cold environments, increasing the versatility of this voltage reference.

Maximum Output Voltage: 3.0005 V

The maximum output voltage ensures that the voltage reference can provide a stable and consistent voltage signal within a tight tolerance range, suitable for precise electronic systems.

Terminal Finish: NICKEL PALLADIUM GOLD

The nickel palladium gold terminal finish offers excellent conductivity and corrosion resistance, ensuring reliable electrical connections for optimal performance.

Maximum Seated Height: 1.12 mm

The compact maximum seated height allows for space-efficient installation in compact devices or circuit layouts, making it a versatile choice for PCB integration.

Temperature Grade: INDUSTRIAL

The industrial temperature grade signifies that this voltage reference is designed to operate reliably in industrial settings, where temperature fluctuations and harsh conditions are common.

Technical Specifications

Voltage References CAT8900A300TBGT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.0005 V

Minimum Output Voltage:

2.9995 V

Nominal Output Voltage:

3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900A300TBGT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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