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CAT8900A330TBGT3

Onsemi

CAT8900A330TBGT3 by Onsemi

CAT8900A330TBGT3 by Onsemi is a 3-terminal voltage reference with nominal output of 3.3V, suitable for industrial applications. It operates b/w -40 to 85 °C, with supply voltage range of 2.7-5.5V and compact dimensions of 2.92mm x 1.3mm x 1.12mm, making it ideal for space-constrained designs requiring precise voltage regulation.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,298 parts In-Stock

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Digiode

USA . 644 parts In-Stock

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644

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Kulean Microsystems

USA . 6,019 parts In-Stock

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SupplyDigital Components

Austria . 5,557 parts In-Stock

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TANS Electronics

Latvia . 4,548 parts In-Stock

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Corphita

USA . 1,666 parts In-Stock

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Northwest PG Solutions

USA . 1,531 parts In-Stock

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Corohmni

South Africa . 322 parts In-Stock

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Native Components

USA . 286 parts In-Stock

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UHIMA Technologies

Türkiye . 268 parts In-Stock

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Problanco Electronics

Mexico . 97 parts In-Stock

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Overview

Enhance the performance of your electronic devices with the CAT8900A330TBGT3 by Onsemi. Designed with precision and reliability in mind, this voltage reference offers unparalleled quality and accuracy for a wide range of applications. From industrial machinery to consumer electronics, this product delivers consistent and stable voltage output, ensuring optimal functionality and efficiency. Upgrade your projects with Onsemi's trusted technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the voltage reference, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and secure installation on a circuit board, saving space and simplifying assembly.

Nominal Supply Voltage (Vsup): 3 V

Offers a stable and consistent supply voltage, ensuring reliable performance.

No. of Terminals: 3

Simple and easy to interface with other components in the circuit.

Maximum Operating Temperature: 85 °C

Can operate in a wide range of temperatures, making it suitable for various industrial applications.

Minimum Output Voltage: 3.2995 V

Precise output voltage ensures accurate measurement and control in the circuit.

Terminal Finish: NICKEL PALLADIUM GOLD

Provides excellent conductivity and corrosion resistance for reliable connections.

Maximum Output Voltage: 3.3005 V

Provides a close tolerance output voltage, ensuring precision in voltage regulation.

Width (mm): 1.3 mm

Compact size allows for easy integration into space-constrained designs.

Minimum Supply Voltage (Vsup): 2.7 V

Can operate at low supply voltages, making it suitable for battery-powered devices.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments, ensuring reliability in demanding conditions.

Terminal Pitch: 0.95 mm

Fine pitch terminals allow for high-density mounting on a PCB.

Nominal Output Voltage: 3.3 V

Close to the standard voltage level, making it compatible with a wide range of applications.

Technical Specifications

Voltage References CAT8900A330TBGT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

3.3005 V

Minimum Output Voltage:

3.2995 V

Nominal Output Voltage:

3.3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900A330TBGT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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