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CAT8900A120TBGT3

Onsemi

CAT8900A120TBGT3 by Onsemi

CAT8900A120TBGT3 by Onsemi is a 3-terminal voltage reference with a nominal output voltage of 1.2V and operates in industrial temperature grade range from -40 to 85 °C. It has a small outline, thin profile package style suitable for surface mount applications, making it ideal for precision voltage reference in various electronic devices.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,481 parts In-Stock

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Vyrian

USA . 680 parts In-Stock

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680

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Northwest PG Solutions

USA . 1,001 parts In-Stock

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$2.912

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$2.912

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Problanco Electronics

Mexico . 6,823 parts In-Stock

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Corphita

USA . 2,421 parts In-Stock

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TANS Electronics

Latvia . 1,291 parts In-Stock

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UHIMA Technologies

Türkiye . 792 parts In-Stock

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Kulean Microsystems

USA . 767 parts In-Stock

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Native Components

USA . 700 parts In-Stock

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$2.568

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Corohmni

South Africa . 335 parts In-Stock

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SupplyDigital Components

Austria . 112 parts In-Stock

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Overview

Enhance your electronic designs with the CAT8900A120TBGT3 by Onsemi, a top-tier manufacturer known for delivering superior quality voltage references. Ideal for a wide range of applications, this product offers unmatched precision and stability, ensuring optimal performance in your circuits. With its compact size, efficient surface mount design, and reliable terminal finish, this voltage reference is a must-have for any project requiring precise output voltage regulation. Trust in Onsemi's expertise and experience to elevate your designs to new heights with the CAT8900A120TBGT3.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to external elements, making the product long-lasting and reliable.

Surface Mount: YES

Facilitates easy installation and integration into circuit boards, saving time and effort during assembly.

Nominal Supply Voltage (Vsup): 3 V

Optimal voltage supply for consistent and stable performance of the voltage reference.

No. of Terminals: 3

Simplified connection setup and reduced complexity in the circuit design.

Maximum Operating Temperature: 85 °C

High operating temperature range suitable for industrial applications, ensuring reliable performance in challenging environments.

Minimum Output Voltage: 1.1995 V

Precise output voltage regulation ensuring accurate reference voltage for other components.

Minimum Operating Temperature: -40 °C

Wide operating temperature range allowing functionality in extreme cold conditions.

Terminal Finish: NICKEL PALLADIUM GOLD

Enhanced conductivity and corrosion resistance for better signal transmission and longevity.

Maximum Output Voltage: 1.2005 V

Close tolerance on output voltage ensuring consistency and reliability in voltage reference.

Terminal Position: DUAL

Versatile terminal positioning for flexibility in installation and compatibility with various circuit layouts.

Width (mm): 1.3 mm

Compact size for space-efficient integration in electronic devices and PCBs.

Temperature Grade: INDUSTRIAL

Designed to withstand harsh industrial environments with stable operation and reliability.

Technical Specifications

Voltage References CAT8900A120TBGT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

1.2005 V

Minimum Output Voltage:

1.1995 V

Nominal Output Voltage:

1.2 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900A120TBGT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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