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CAT8900A102TBGT3

Onsemi

CAT8900A102TBGT3 by Onsemi

CAT8900A102TBGT3 by Onsemi is a 3-terminal voltage reference with output voltage range of 1.0235V to 1.0245V, suitable for industrial applications. It operates b/w -40 °C to 85°C, with supply voltage ranging from 2.7V to 5.5V and compact dimensions of 2.92mm x 1.3mm x 1.12mm for space-constrained designs.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Digiode

USA . 339 parts In-Stock

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Vyrian

USA . 174 parts In-Stock

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Northwest PG Solutions

USA . 1,533 parts In-Stock

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$2.912

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Problanco Electronics

Mexico . 6,598 parts In-Stock

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Kulean Microsystems

USA . 4,469 parts In-Stock

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SupplyDigital Components

Austria . 3,982 parts In-Stock

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Corphita

USA . 2,122 parts In-Stock

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TANS Electronics

Latvia . 964 parts In-Stock

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Native Components

USA . 782 parts In-Stock

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UHIMA Technologies

Türkiye . 191 parts In-Stock

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Corohmni

South Africa . 93 parts In-Stock

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Overview

Experience unparalleled precision and reliability with the CAT8900A102TBGT3 by Onsemi, a leading manufacturer known for delivering top-notch voltage references. This small outline, thin profile IC offers exceptional performance in a wide range of industrial applications, providing a stable output voltage for maximum efficiency. With a nominal supply voltage of 3V and a temperature grade of industrial, this three-terminal voltage reference ensures consistent operation even in extreme conditions. Trust Onsemi to provide you with the quality and value you need for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy package makes the product lightweight and durable, making it suitable for various applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on printed circuit boards, saving space and facilitating automated assembly.

Nominal Supply Voltage (Vsup): 3 V

Stable nominal supply voltage of 3V ensures reliable and consistent performance in voltage reference applications.

No. of Terminals: 3

Three terminals provide straightforward connection and integration into circuit designs, simplifying the overall setup.

Minimum Output Voltage: 1.0235 V

Precise minimum output voltage of 1.0235V ensures accurate voltage referencing and stability in applications that require a specific voltage level.

Terminal Finish: NICKEL PALLADIUM GOLD

Nickel Palladium Gold terminal finish provides excellent conductivity, corrosion resistance, and solderability for reliable electrical connections.

Width (mm): 1.3 mm

Compact width of 1.3mm allows for space-efficient placement on PCBs and ensures compatibility with various board designs.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage of 2.7V enables operation in low-power applications and enhances energy efficiency.

Temperature Grade: INDUSTRIAL

Industrial-grade temperature tolerance ensures reliable performance across a wide range of operating temperatures, making the product suitable for industrial applications.

Technical Specifications

Voltage References CAT8900A102TBGT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Voltage:

1.0245 V

Minimum Output Voltage:

1.0235 V

Nominal Output Voltage:

1.024 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Trim or Adjustable Output (V):

NO

Width (mm):

1.3 mm

Trade Compliance

CAT8900A102TBGT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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