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CAT8900B300TBGT3

Onsemi

CAT8900B300TBGT3 by Onsemi

CAT8900B300TBGT3 by Onsemi is a 3-terminal voltage reference with output voltage of 3V, operating temperature range of -40 to 85 °C, and supply current of 0.0008mA. It is used in industrial applications requiring precise voltage regulation in compact spaces.

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3

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1k+

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Vyrian

USA . 8,640 parts In-Stock

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Digiode

USA . 971 parts In-Stock

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Martec Srl

Italy . 110 parts In-Stock

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Native Components

USA . 631 parts In-Stock

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$1.543

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631

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Northwest PG Solutions

USA . 2,041 parts In-Stock

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$1.698

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AZTECH Wire

Italy . 362 parts In-Stock

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$15.590

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Component Stockers USA

USA . 313 parts In-Stock

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$99.990

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Kulean Microsystems

USA . 8,134 parts In-Stock

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TANS Electronics

Latvia . 6,588 parts In-Stock

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SupplyDigital Components

Austria . 5,488 parts In-Stock

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Problanco Electronics

Mexico . 4,367 parts In-Stock

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UHIMA Technologies

Türkiye . 981 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 155 parts In-Stock

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Corphita

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Overview

Elevate your voltage reference needs with the CAT8900B300TBGT3 by Onsemi. Crafted with precision and quality in mind, this small outline, thin profile voltage reference offers a reliable solution for various industrial applications. With a nominal output voltage of 3V and maximum voltage tolerance of 0.03%, this three-terminal voltage reference ensures consistent performance even in challenging environments. Trust in Onsemi's expertise and invest in the CAT8900B300TBGT3 for unmatched reliability and precision in your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and durability, making the product suitable for various environmental conditions.

Nominal Supply Voltage (Vsup): 3 V

Stable supply voltage ensures consistent performance of the voltage reference.

Maximum Operating Temperature: 85 °C

Wide operating temperature range allows the product to function reliably in different temperature environments.

Minimum Output Voltage: 2.9999 V

Precise output voltage ensures accurate reference for other components in the circuit.

Maximum Output Voltage: 3.0001 V

Close to nominal output voltage with tight tolerance ensures accurate voltage reference.

Minimum Supply Voltage (Vsup): 2.7 V

Low minimum supply voltage allows for flexibility in power requirements and compatibility with a range of systems.

Maximum Voltage Tolerance: 0.03 %

Low voltage tolerance ensures high precision and accuracy in voltage regulation.

Max Voltage Temp Coef: 50 ppm/°C

Low temperature coefficient helps in maintaining stability of the output voltage over a wide temperature range.

Technical Specifications

Voltage References CAT8900B300TBGT3 attributes and parameters. Explore more Voltage References devices from Onsemi

Specs

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e4

Length:

2.92 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Outputs:

1

No. of Terminals:

3

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Maximum Output Current:

.01 A

Maximum Output Voltage:

3.0001 V

Minimum Output Voltage:

2.9999 V

Nominal Output Voltage:

3 V

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TO-236

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.12 mm

Maximum Supply Current (Isup):

.0008 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage (Vsup):

3 V

Surface Mount:

YES

Max Voltage Temp Coef:

50 ppm/Cel

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

GULL WING

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Trim or Adjustable Output (V):

NO

Maximum Voltage Tolerance:

.03 %

Width (mm):

1.3 mm

Trade Compliance

CAT8900B300TBGT3 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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