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5LN01M-TL-H

Onsemi

5LN01M-TL-H by Onsemi

5LN01M-TL-H by Onsemi is a N-CHANNEL FET with 0.1A max drain current and 0.15W power dissipation. Ideal for surface mount applications, it operates up to 150 °C making it suitable for various electronic devices requiring low power consumption.

Median Price

$0.076

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

23,000

-

$0.079

$0.066

$0.059

DigiKey

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.100

23,000

-

-

-

$0.100

Verical

USA . 12,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

$0.073

12,000

-

-

-

$0.073

Chip1Stop

Japan . 90 parts In-Stock

1+ parts

-

100+ parts

$0.051

1k+ parts

-

10k+ parts

-

90

-

$0.051

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 935 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

10k+ parts

-

935

$0.055

-

-

-

Digiode

USA . 1,225 parts In-Stock

1+ parts

$0.062

100+ parts

-

1k+ parts

-

10k+ parts

-

1,225

$0.062

-

-

-

Bristol Electronics

USA . 3,210 parts In-Stock

1+ parts

$0.375

100+ parts

$0.188

1k+ parts

$0.075

10k+ parts

$0.056

3,210

$0.375

$0.188

$0.075

$0.056

Chip Stock

USA . 41,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

41,000

-

-

-

-

DigiKey Marketplace

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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23,000

-

-

-

-

Dan-Mar Components

USA . 3,210 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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3,210

-

-

-

-

ACDS - Activité Composants Distribution Service

France . 1,897 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,897

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 74 parts In-Stock

1+ parts

$0.055

100+ parts

-

1k+ parts

-

10k+ parts

-

74

$0.055

-

-

-

Corphita

USA . 1,796 parts In-Stock

1+ parts

$0.058

100+ parts

-

1k+ parts

-

10k+ parts

-

1,796

$0.058

-

-

-

Component Stockers USA

USA . 16,617 parts In-Stock

1+ parts

$0.070

100+ parts

$0.060

1k+ parts

$0.060

10k+ parts

$0.060

16,617

$0.070

$0.060

$0.060

$0.060

Kepictronics

USA . 39,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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39,000

-

-

-

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Continental Prestige Electronics

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.078

10k+ parts

-

23,000

-

-

$0.078

-

Perfect Parts

USA . 12,768 parts In-Stock

1+ parts

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100+ parts

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12,768

-

-

-

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SupplyDigital Components

Austria . 8,372 parts In-Stock

1+ parts

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8,372

-

-

-

-

Kulean Microsystems

USA . 7,603 parts In-Stock

1+ parts

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1k+ parts

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7,603

-

-

-

-

TANS Electronics

Latvia . 6,824 parts In-Stock

1+ parts

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6,824

-

-

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Glotronic Ltd.

UK . 2,780 parts In-Stock

1+ parts

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100+ parts

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2,780

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-

-

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Northwest PG Solutions

USA . 1,552 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.415

10k+ parts

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1,552

-

-

$4.415

-

UHIMA Technologies

Türkiye . 832 parts In-Stock

1+ parts

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100+ parts

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832

-

-

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Authorized Procurement Solutions

USA . 760 parts In-Stock

1+ parts

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760

-

-

-

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GreenTree Electronics

Israel . 760 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

-

10k+ parts

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760

-

-

-

-

Native Components

USA . 204 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$4.370

10k+ parts

-

204

-

-

$4.370

-

Problanco Electronics

Mexico . 175 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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175

-

-

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-

Overview

Upgrade your electronics with the 5LN01M-TL-H by Onsemi, a top-quality N-CHANNEL FET that offers reliable performance and durability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this single configuration transistor is perfect for a variety of applications. With a maximum drain current of 0.1A and maximum power dissipation of 0.15W, this FET is designed to operate at peak performance even in high-temperature environments. Trust Onsemi for superior quality and choose the 5LN01M-TL-H for your next project.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have higher electron mobility and better performance compared to P-channel transistors, making this product suitable for high-speed applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces complexity, making the product easier to integrate into electronic devices.

Surface Mount: YES

Surface mount technology allows for easy and efficient PCB assembly, saving time and cost in manufacturing.

Maximum Drain Current (Abs) (ID): 0.1 A

With a maximum drain current of 0.1A, this transistor can handle moderate power requirements in various applications.

Maximum Power Dissipation (Abs): 0.15 W

The low power dissipation of 0.15W ensures efficient performance and helps prevent overheating in the circuit.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers high reliability, low power consumption, and fast switching speeds, making this product ideal for demanding applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, providing reliability in harsh environments.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish offers good solderability and ensures stable electrical connections, enhancing the overall reliability of the product.

Maximum Time At Peak Reflow Temperature (s): 30

The short reflow time of 30 seconds minimizes thermal stress on the component during soldering, preserving its electrical and mechanical properties.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260 °C enables reliable soldering and ensures proper bonding of the transistor to the PCB, preventing solder joint failures.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5LN01M-TL-H attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e6

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Powers

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

5LN01M-TL-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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