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5LN01SP

Onsemi

5LN01SP by Onsemi

5LN01SP by Onsemi is a N-CHANNEL FET with 50V DS breakdown voltage. Ideal for switching applications, it has 0.1A max drain current and 7.8 ohm RDS(on). Package: PLASTIC/EPOXY, IN-LINE style, operating up to 150°C.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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VNN

France . 2,178 parts In-Stock

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Digiode

USA . 1,449 parts In-Stock

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Vyrian

USA . 562 parts In-Stock

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Nova Conductors

Japan . 60 parts In-Stock

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AZTECH Wire

Italy . 562 parts In-Stock

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$9.402

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Ampacity Inc.

Singapore . 790 parts In-Stock

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$42.050

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Problanco Electronics

Mexico . 8,382 parts In-Stock

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CPlus Electronics

USA . 7,500 parts In-Stock

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TANS Electronics

Latvia . 5,774 parts In-Stock

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Perfect Parts

USA . 5,533 parts In-Stock

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Kulean Microsystems

USA . 4,153 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 3,180 parts In-Stock

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SupplyDigital Components

Austria . 1,774 parts In-Stock

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UHIMA Technologies

Türkiye . 819 parts In-Stock

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Corohmni

South Africa . 340 parts In-Stock

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Corphita

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Bastille Electronics

Australia . 84 parts In-Stock

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Overview

Unleash the power of innovation with the 5LN01SP by Onsemi. Crafted with precision and excellence, this Small Signal Field Effect Transistor is designed for maximum performance in switching applications. With a built-in diode and N-channel configuration, this transistor offers unparalleled reliability and efficiency. Whether you're a tech enthusiast or a professional engineer, the 5LN01SP delivers value and benefits that will elevate your projects to the next level. Experience the advantages of Onsemi's top-notch quality and unlock endless possibilities with this cutting-edge component.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for a variety of applications.

Polarity or Channel Type:

N-CHANNEL - Offers efficient signal and power handling for enhanced performance in switching applications.

Configuration:

SINGLE WITH BUILT-IN DIODE - Simplifies circuit design and saves space by integrating a diode into the transistor package.

Transistor Application:

SWITCHING - Ideal for switching applications due to its fast response time and high reliability.

Minimum DS Breakdown Voltage:

50 V - Ensures reliable operation in high voltage environments, making it suitable for a wide range of applications.

Package Shape:

RECTANGULAR - Allows for easy mounting and integration into existing circuits.

Terminal Form:

THROUGH-HOLE - Ensures secure connections and easy installation in various electronic devices.

Operating Mode:

ENHANCEMENT MODE - Provides enhanced control over the transistor's conductivity, improving overall efficiency.

Maximum Drain Current (Abs):

0.1 A - Handles moderate current levels, making it suitable for low to medium power applications.

No. of Terminals:

3 - Offers flexibility in circuit design and connectivity options.

Maximum Power Dissipation (Abs):

0.25 W - Can dissipate heat effectively, ensuring reliable performance even under heavy loads.

Package Style (Meter):

IN-LINE - Fits well in line with other components, optimizing space utilization in crowded circuits.

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR - Provides high speed and low power consumption characteristics for efficient operation.

Maximum Operating Temperature:

150 °C - Can withstand high temperatures, making it suitable for harsh environments.

Transistor Element Material:

SILICON - Offers high performance and reliability as a semiconductor material.

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni) - Provides excellent conductivity and corrosion resistance for long-lasting connections.

Maximum Drain-Source On Resistance:

7.8 ohm - Low resistance enhances efficiency and reduces power loss in switching applications.

Terminal Position:

SINGLE - Simplifies circuit design and installation with a single terminal position for easy connectivity.

Technical Specifications

Small Signal Field Effect Transistors (FET) 5LN01SP attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

50 V

Maximum Drain Current (Abs) (ID):

.1 A

Maximum Drain Current (ID):

.1 A

Maximum Drain-Source On Resistance:

7.8 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSIP-T3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

IN-LINE

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

5LN01SP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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