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1SMA22CAT3G

Onsemi

1SMA22CAT3G by Onsemi

1SMA22CAT3G by Onsemi is a Zener diode with bidirectional polarity, ideal for transient suppression. It features a breakdown voltage of 24.4V and clamping voltage of 35.5V, ensuring protection against voltage spikes. With a max power dissipation of 0.5W and operating temperature range from -65 to 150 °C, it is suitable for various electronic applications requiring surge protection.

Median Price

$1.400

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 1,202 parts In-Stock

1+ parts

$1.400

100+ parts

$0.079

1k+ parts

$0.058

10k+ parts

-

1,202

$1.400

$0.079

$0.058

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Bristol Electronics

USA . 4,916 parts In-Stock

1+ parts

$0.750

100+ parts

$0.278

1k+ parts

$0.195

10k+ parts

-

4,916

$0.750

$0.278

$0.195

-

Digiode

USA . 2,203 parts In-Stock

1+ parts

$1.330

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2,203

$1.330

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Vyrian

USA . 5,754 parts In-Stock

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5,754

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Flip Electronics

USA . 1,300 parts In-Stock

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1,300

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Distributors (Availability)

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Corphita

USA . 1,584 parts In-Stock

1+ parts

$1.260

100+ parts

-

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1,584

$1.260

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Corohmni

South Africa . 290 parts In-Stock

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$1.400

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290

$1.400

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Northwest PG Solutions

USA . 2,051 parts In-Stock

1+ parts

$3.077

100+ parts

-

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2,051

$3.077

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AZTECH Wire

Italy . 563 parts In-Stock

1+ parts

$12.120

100+ parts

-

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563

$12.120

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Component Stockers USA

USA . 537 parts In-Stock

1+ parts

$99.990

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537

$99.990

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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90,000

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Kepictronics

USA . 52,800 parts In-Stock

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52,800

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Perfect Parts

USA . 17,989 parts In-Stock

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17,989

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TANS Electronics

Latvia . 6,830 parts In-Stock

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6,830

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Kulean Microsystems

USA . 6,065 parts In-Stock

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Problanco Electronics

Mexico . 4,444 parts In-Stock

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4,444

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SupplyDigital Components

Austria . 4,130 parts In-Stock

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4,130

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Glotronic Ltd.

UK . 2,780 parts In-Stock

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2,780

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Authorized Procurement Solutions

USA . 1,202 parts In-Stock

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1,202

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GreenTree Electronics

Israel . 1,202 parts In-Stock

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1,202

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CPlus Electronics

USA . 300 parts In-Stock

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300

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Native Components

USA . 263 parts In-Stock

1+ parts

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$2.713

10k+ parts

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263

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$2.713

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UHIMA Technologies

Türkiye . 135 parts In-Stock

1+ parts

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135

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Overview

Experience superior protection against voltage spikes with the 1SMA22CAT3G by Onsemi. This high-quality transient suppression device offers reliable performance in a compact package, making it ideal for a wide range of applications. With Onsemi's reputation for excellence in manufacturing, you can trust that this product will deliver unmatched value and peace of mind. Safeguard your electronics and ensure uninterrupted operation with the 1SMA22CAT3G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and efficient heat dissipation, making the product reliable for long-term use.

Maximum Non Repetitive Peak Reverse Power Dissipation: 400 W

High power dissipation capability ensures protection against sudden voltage spikes and surges, making it suitable for critical applications.

Minimum Operating Temperature: -65 °C

Wide operating temperature range allows the device to function effectively in extreme environmental conditions.

Maximum Power Dissipation: 0.5 W

Efficient power dissipation enables the device to operate at optimal performance while maintaining low power consumption.

Maximum Breakdown Voltage: 26.97 V

High breakdown voltage ensures effective suppression of transient voltage spikes, protecting connected devices from damage.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Trans voltage suppressor diode technology provides fast response time and efficient clamping of transient voltage, ensuring reliable protection.

Technical Specifications

Transient Suppression Devices 1SMA22CAT3G attributes and parameters. Explore more Transient Suppression Devices devices from Onsemi

Specs

Additional Features:

LOW ZENER IMPEDANCE, EXCELLENT CLAMPING CAPABILITY, HIGH RELIABILITY

Maximum Breakdown Voltage:

26.97 V

Minimum Breakdown Voltage:

24.4 V

Maximum Clamping Voltage:

35.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Reverse Power Dissipation:

400 W

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

BIDIRECTIONAL

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

22 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

1SMA22CAT3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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