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MMG3003NT1

NXP Semiconductors

MMG3003NT1 by NXP Semiconductors

MMG3003NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 15 dBm CW input power, 19.3 dB gain, and 6.2V power supply. It operates from 40 MHz to 3600 MHz, ideal for wide band medium power applications requiring surface mounting feature.

Median Price

$2.337

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

MMG3003NT1 by NXP Semiconductors
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Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,610 parts In-Stock

1+ parts

$2.724

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1,610

$2.724

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Rochester

USA . 4,493 parts In-Stock

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$2.090

1k+ parts

$1.870

10k+ parts

$1.760

4,493

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$2.090

$1.870

$1.760

Verical

USA . 3,440 parts In-Stock

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$2.337

10k+ parts

$2.200

3,440

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$2.337

$2.200

Distributors (In-Stock)

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Digiode

USA . 2,929 parts In-Stock

1+ parts

$2.223

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2,929

$2.223

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Vyrian

USA . 927 parts In-Stock

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$2.340

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927

$2.340

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Chip Stock

USA . 4,800 parts In-Stock

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4,800

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Anansix

USA . 1,174 parts In-Stock

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1,174

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Cogito LLC

Ukraine . 96 parts In-Stock

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Distributors (Availability)

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One Stop Electronics

USA . 1,950 parts In-Stock

1+ parts

$1.990

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1,950

$1.990

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Corphita

USA . 2,760 parts In-Stock

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$2.106

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2,760

$2.106

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Continental Prestige Electronics

USA . 7,050 parts In-Stock

1+ parts

$2.110

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7,050

$2.110

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Component Stockers USA

USA . 5,139 parts In-Stock

1+ parts

$2.410

100+ parts

$2.030

1k+ parts

$2.060

10k+ parts

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5,139

$2.410

$2.030

$2.060

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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UNI Independent Distributors

Spain . 8,249 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,984 parts In-Stock

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6,984

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Kepictronics

USA . 2,000 parts In-Stock

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Perfect Parts

USA . 912 parts In-Stock

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912

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Overview

Unlock new possibilities with the NXP Semiconductors MMG3003NT1 RF & Microwave Amplifier. Manufactured by industry leader NXP Semiconductors, this wide band medium power amplifier offers unparalleled performance and reliability. From enhancing signal strength in communication systems to improving radar and satellite applications, this component is a game-changer. With a maximum input power of 15 dBm and a gain of 19.3 dB, customers can trust that their projects will reach new heights with the MMG3003NT1. Elevate your designs with NXP Semiconductors today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy packaging provides good durability and protection for the amplifier, making it suitable for a range of operating conditions.

Maximum Input Power (CW): 15 dBm

The high maximum input power allows for robust performance and handling of strong input signals, ensuring consistent operation.

Construction: COMPONENT

The component construction indicates high-quality manufacturing and design, resulting in reliable and consistent amplifier performance.

Power Supplies (V): 6.2

The 6.2V power supply requirement is common and easily achievable, making it convenient for integration into various systems.

No. of Terminals: 3

The minimal number of terminals simplifies installation and setup, reducing complexity and potential points of failure in the system.

Terminal Finish: Matte Tin (Sn)

The matte tin finish provides good conductivity and corrosion resistance, ensuring reliable electrical connections for optimal performance.

Technology: BIPOLAR

Bipolar technology offers high linearity and low noise characteristics, making this amplifier suitable for a wide range of applications requiring clean signal amplification.

Maximum Supply Current: 205 mA

The moderate supply current requirement ensures efficient power usage and minimal heat generation, contributing to overall system reliability.

RF or Microwave Device Type: WIDE BAND MEDIUM POWER

The wideband and medium power capability of this amplifier makes it versatile and suitable for various RF and microwave applications, offering a balance between performance and power requirements.

Characteristic Impedance: 50 ohm

The 50 ohm characteristic impedance matches common RF system requirements, ensuring compatibility and ease of integration.

Gain: 19.3 dB

The high gain of 19.3 dB amplifies the input signal effectively, boosting output power and improving signal strength for enhanced performance.

Minimum Operating Frequency: 40 MHz

The low minimum operating frequency allows for amplification of signals across a wide frequency range, making this amplifier versatile and suitable for diverse applications.

Mounting Feature: SURFACE MOUNT

The surface mount capability simplifies installation and integration, enabling easy mounting on PCBs for efficient use of space and streamlined manufacturing processes.

Maximum Operating Frequency: 3600 MHz

The high maximum operating frequency ensures compatibility with a wide range of RF and microwave signals, making this amplifier ideal for applications requiring high-frequency performance.

Technical Specifications

RF & Microwave Amplifiers MMG3003NT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

19.3 dB

Maximum Input Power (CW):

15 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Frequency:

3600 MHz

Minimum Operating Frequency:

40 MHz

Package Body Material:

Package Equivalence Code:

TO-243

Power Supplies (V):

6.2

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

205 mA

Technology:

Terminal Finish:

Matte Tin (Sn)

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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