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MMG3001NT1

NXP Semiconductors

MMG3001NT1 by NXP Semiconductors

MMG3001NT1 by NXP Semiconductors is a RF & Microwave Amplifier with 10 dBm CW input power, 1.17 VSWR, and 18 dB gain. It operates from 40 MHz to 3600 MHz, ideal for wide band low power applications. This component has a characteristic impedance of 50 ohms and requires a 5.6V power supply with a max current draw of 300 mA.

Median Price

$2.500

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 1,511 parts In-Stock

1+ parts

$3.249

100+ parts

$1.896

1k+ parts

$1.681

10k+ parts

-

1,511

$3.249

$1.896

$1.681

-

Rochester

USA . 1,511 parts In-Stock

1+ parts

-

100+ parts

$2.050

1k+ parts

$1.840

10k+ parts

$1.730

1,511

-

$2.050

$1.840

$1.730

DigiKey

USA . 1,511 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.700

10k+ parts

-

1,511

-

-

$2.700

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Verical

USA . 1,505 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$2.300

10k+ parts

$2.163

1,505

-

-

$2.300

$2.163

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$2.050

100+ parts

-

1k+ parts

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10k+ parts

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100

$2.050

-

-

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Digiode

USA . 951 parts In-Stock

1+ parts

$2.185

100+ parts

-

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951

$2.185

-

-

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Anansix

USA . 1,638 parts In-Stock

1+ parts

-

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1,638

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DigiKey Marketplace

USA . 1,511 parts In-Stock

1+ parts

-

100+ parts

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1,511

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-

-

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Vyrian

USA . 1,291 parts In-Stock

1+ parts

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1,291

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Sensible Micro Corp

USA . 735 parts In-Stock

1+ parts

-

100+ parts

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735

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 1,233 parts In-Stock

1+ parts

$1.950

100+ parts

-

1k+ parts

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10k+ parts

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1,233

$1.950

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Ampacity Inc.

Singapore . 1,122 parts In-Stock

1+ parts

$1.950

100+ parts

-

1k+ parts

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10k+ parts

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1,122

$1.950

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-

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Netroflash

USA . 500 parts In-Stock

1+ parts

$2.050

100+ parts

-

1k+ parts

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500

$2.050

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Corphita

USA . 3,513 parts In-Stock

1+ parts

$2.070

100+ parts

-

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10k+ parts

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3,513

$2.070

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A-Z Elektronik GmbH

Germany . 6,122 parts In-Stock

1+ parts

-

100+ parts

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6,122

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GreenTree Electronics

Israel . 5,300 parts In-Stock

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5,300

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UNI Independent Distributors

Spain . 3,642 parts In-Stock

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3,642

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Glotronic Ltd.

UK . 1,800 parts In-Stock

1+ parts

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1,800

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Continental Prestige Electronics

USA . 1,511 parts In-Stock

1+ parts

-

100+ parts

$1.500

1k+ parts

-

10k+ parts

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1,511

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$1.500

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Authorized Procurement Solutions

USA . 1,500 parts In-Stock

1+ parts

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100+ parts

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10k+ parts

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1,500

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Assy Fe

Spain . 1,000 parts In-Stock

1+ parts

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100+ parts

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1,000

-

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Kepictronics

USA . 840 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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10k+ parts

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840

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Overview

Elevate your RF and microwave applications with the MMG3001NT1 by NXP Semiconductors. Crafted with precision and expertise, this wide band low power amplifier offers a seamless blend of quality and performance. With an impressive gain of 18 dB and a maximum operating frequency of 3600 MHz, this component is designed to deliver exceptional results. Whether you're in the telecommunications industry or working on radar systems, this amplifier provides the reliability and efficiency you need to take your projects to the next level. Trust NXP Semiconductors to power your innovations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material offers durability and protection to the amplifier, making it suitable for various environments.

Maximum Input Power (CW): 10 dBm

With a high maximum input power capacity, this amplifier can handle strong signals without distortion.

Maximum Voltage Standing Wave Ratio: 1.17

The low VSWR indicates efficient power transfer and minimal signal loss within the system.

Construction: COMPONENT

Being a component-based design allows for easy integration into different circuit layouts for flexibility in applications.

Power Supplies (V): 5.6

The moderate power supply voltage requirement makes this amplifier compatible with standard power sources.

No. of Terminals: 3

The simple three-terminal setup simplifies the wiring process and enhances ease of installation.

Technology: BIPOLAR

Bipolar technology offers high gain and linearity, making this amplifier suitable for low-power RF applications.

Maximum Supply Current: 300 mA

This low current requirement ensures efficient power usage and minimal heat dissipation.

RF or Microwave Device Type: WIDE BAND LOW POWER

With wide band coverage and low power consumption, this amplifier is versatile and energy-efficient.

Characteristic Impedance: 50 ohm

The 50-ohm impedance matching ensures maximum power transfer and signal fidelity in the system.

Gain: 18 dB

The high gain level of 18 dB amplifies weak signals effectively for improved performance.

Minimum Operating Frequency: 40 MHz

Operating from 40 MHz ensures compatibility with a wide range of RF signals and applications.

Mounting Feature: SURFACE MOUNT

The surface mount design allows for easy and secure installation on PCBs or other surfaces.

Maximum Operating Frequency: 3600 MHz

The wide frequency range up to 3600 MHz provides flexibility for use in various high-frequency applications.

Technical Specifications

RF & Microwave Amplifiers MMG3001NT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

18 dB

Maximum Input Power (CW):

10 dBm

Mounting Feature:

No. of Functions:

1

No. of Terminals:

3

Maximum Operating Frequency:

3600 MHz

Minimum Operating Frequency:

40 MHz

Package Body Material:

Package Equivalence Code:

TO-243

Power Supplies (V):

5.6

RF or Microwave Device Type:

Maximum Supply Current:

300 mA

Technology:

Maximum Voltage Standing Wave Ratio:

1.17

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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