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MMG3006NT1

NXP Semiconductors

MMG3006NT1 by NXP Semiconductors

MMG3006NT1 by NXP Semiconductors is a wide band high power RF amplifier with 16.5 dB gain, operating from 400 MHz to 2400 MHz. It has a max input power of 28 dBm and operates at 5V with a max supply current of 960 mA. This component is ideal for applications requiring high power amplification in RF and microwave systems.

Median Price

$9.570

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,942 parts In-Stock

1+ parts

$9.570

100+ parts

$6.830

1k+ parts

$5.170

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3,942

$9.570

$6.830

$5.170

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DigiKey

USA . 1,000 parts In-Stock

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$26.631

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1,000

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$26.631

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Verical

USA . 278 parts In-Stock

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278

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Chip1Stop

Japan . 278 parts In-Stock

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$9.370

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278

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$9.370

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Distributors (In-Stock)

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Vyrian

USA . 56 parts In-Stock

1+ parts

$4.180

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56

$4.180

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Digiode

USA . 4,817 parts In-Stock

1+ parts

$8.008

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4,817

$8.008

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Flip Electronics

USA . 5,000 parts In-Stock

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5,000

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R&J Components

USA . 899 parts In-Stock

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899

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Rebound Electronics

UK . 508 parts In-Stock

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508

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Anansix

USA . 196 parts In-Stock

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196

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Nova Conductors

Japan . 36 parts In-Stock

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36

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Distributors (Availability)

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Corohmni

South Africa . 208 parts In-Stock

1+ parts

$1.330

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208

$1.330

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Ampacity Inc.

Singapore . 1,274 parts In-Stock

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$7.170

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1,274

$7.170

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Corphita

USA . 3,082 parts In-Stock

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$7.587

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3,082

$7.587

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QUARKTWIN TECHNOLOGY LTD

USA . 17,041 parts In-Stock

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17,041

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Metaverse IC Inc.

Canada . 8,000 parts In-Stock

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8,000

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Authorized Procurement Solutions

USA . 3,100 parts In-Stock

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Perfect Parts

USA . 2,910 parts In-Stock

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2,910

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Argo Parts USA

USA . 2,885 parts In-Stock

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2,885

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Continental Prestige Electronics

USA . 2,526 parts In-Stock

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2,526

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GreenTree Electronics

Israel . 1,330 parts In-Stock

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1,330

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UNI Independent Distributors

Spain . 180 parts In-Stock

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180

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Aranea Global

USA . 50 parts In-Stock

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50

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Overview

Elevate your RF and microwave amplification capabilities with the MMG3006NT1 by NXP Semiconductors. Known for their top-quality components, NXP offers a wide band high power amplifier that delivers a gain of 16.5 dB for applications ranging from telecommunications to radar systems. With a maximum input power of 28 dBm and a construction designed for optimal performance, this component is sure to enhance your projects with its reliability and efficiency. Trust in NXP Semiconductors to provide you with the cutting-edge technology you need to succeed.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides durability and resistance to harsh environmental conditions, making the amplifier suitable for a variety of applications.

Maximum Input Power (CW): 28 dBm

With a high maximum input power, this amplifier can handle strong signals without distortion, ensuring reliable performance.

Construction: COMPONENT

Component-level construction allows for precise tuning and customization to meet specific performance requirements.

Power Supplies (V): 5

Operates on a standard 5V power supply, making it easy to integrate into existing systems.

No. of Terminals: 16

Having 16 terminals provides flexibility in connecting external components, enabling versatile configuration options.

Terminal Finish: MATTE TIN

Matte tin finish on the terminals ensures good conductivity and reliable connections for optimal performance.

Technology: BIPOLAR

Bipolar technology offers high linearity and efficiency, resulting in low distortion and improved signal quality.

Maximum Supply Current: 960 mA

With a maximum supply current of 960 mA, this amplifier delivers stable and consistent performance at varying power levels.

RF or Microwave Device Type: WIDE BAND HIGH POWER

Designed as a wide band high power amplifier, it covers a broad frequency range with high output power, suitable for demanding RF and microwave applications.

Characteristic Impedance: 50 ohm

With a characteristic impedance of 50 ohm, this amplifier is compatible with standard RF components and offers efficient power transfer.

Gain: 16.5 dB

With a gain of 16.5 dB, this amplifier boosts the signal strength without introducing excessive noise, enhancing overall system performance.

Minimum Operating Frequency: 400 MHz

Supporting a minimum operating frequency of 400 MHz, this amplifier is suitable for applications requiring wideband coverage in the lower frequency range.

Mounting Feature: SURFACE MOUNT

Surface mount packaging simplifies the installation process and allows for easy integration into compact systems.

Maximum Operating Frequency: 2400 MHz

With a high maximum operating frequency of 2400 MHz, this amplifier can handle high-frequency signals with minimal signal loss or distortion.

Technical Specifications

RF & Microwave Amplifiers MMG3006NT1 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Characteristic Impedance:

50 ohm

Construction:

COMPONENT

Gain:

16.5 dB

Maximum Input Power (CW):

28 dBm

JESD-609 Code:

e3

Mounting Feature:

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Frequency:

2400 MHz

Minimum Operating Frequency:

400 MHz

Package Body Material:

Package Equivalence Code:

LCC16,.16SQ,25

Power Supplies (V):

5

RF or Microwave Device Type:

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

960 mA

Technology:

Terminal Finish:

MATTE TIN

Trade Compliance

MMG3006NT1 RF & Microwave trade compliance attributes, and parameters.

HTS

8542.33.00.01

SB

8542.33.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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