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BSR42-TAPE-13

NXP Semiconductors

BSR42-TAPE-13 by NXP Semiconductors

BSR42-TAPE-13 from NXP Semiconductors is a single NPN power BJT designed for efficient switching applications. It features a max VCEsat of 0.5V, operates up to 150 °C, and supports collector currents up to 1A. Ideal for compact surface mount designs, it ensures reliable performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,528 parts In-Stock

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3,528

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Anansix

USA . 2,274 parts In-Stock

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2,274

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Vyrian

USA . 75 parts In-Stock

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75

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Native Components

USA . 217 parts In-Stock

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$0.723

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217

$0.723

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Northwest PG Solutions

USA . 1,980 parts In-Stock

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$0.795

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1,980

$0.795

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One Stop Electronics

USA . 822 parts In-Stock

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$50.050

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822

$50.050

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UNI Independent Distributors

Spain . 5,474 parts In-Stock

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Corphita

USA . 2,354 parts In-Stock

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Overview

Unlock the power of innovation with the BSR42-TAPE-13 from NXP Semiconductors! Crafted for excellence, this NPN transistor excels in switching applications, ensuring reliability and efficiency for your projects. With NXP's renowned quality backing it, you can trust in its exceptional performance and durability across various uses—be it in consumer electronics or industrial systems. Elevate your designs with a component that offers unmatched value and peace of mind!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material ensures protection against environmental factors, making this transistor reliable for various applications.

Polarity or Channel Type: NPN

NPN configuration allows for efficient switching and amplification, making it suitable for a variety of electronic circuits.

Configuration: SINGLE

A single configuration simplifies design and integration into circuits, ideal for compact applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast response times, enhancing circuit performance.

Surface Mount: YES

The surface mount capabilities facilitate easier assembly and reduced PCB space, making it suitable for modern electronic devices.

Maximum VCEsat: 0.5 V

Low saturation voltage ensures efficient operation, reducing power loss and improving energy efficiency in switching applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes the layout for PCB design, helping to maximize space utilization.

Terminal Form: FLAT

Flat terminal design allows for better solder flow, ensuring strong electrical connections.

No. of Terminals: 3

Three terminals provide essential connections for collector, emitter, and base, simplifying circuit integration.

Package Style (Meter): SMALL OUTLINE

The small outline package is perfect for space-constrained applications, enabling the design of compact electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum current gain ensures adequate amplification in applications, making it effective in signal processing.

Maximum Operating Temperature: 150 °C

High operating temperature tolerance allows for use in demanding environments, enhancing reliability.

Maximum Collector-Base Capacitance: 12 pF

Low capacitance ensures minimal input delay, resulting in faster switching speeds and improved performance.

Maximum Collector-Emitter Voltage: 80 V

With a high voltage rating, this transistor can handle a wide range of applications and prevents breakdown under heavy load.

Transistor Element Material: SILICON

Silicon material ensures stable performance and is widely used, making it a cost-effective choice for manufacturers.

Maximum Turn On Time (ton): 250 ns

Rapid turn-on time improves switching efficiency, making it suitable for high-speed applications.

Maximum Collector Current (IC): 1 A

1 A current handling capability allows this transistor to support a variety of load conditions, enhancing its versatility.

Maximum Turn Off Time (toff): 1000 ns

A quick turn-off time contributes to efficient control in pulse width modulation (PWM) and other switching applications.

Terminal Position: SINGLE

Single terminal position simplifies the layout for easier integration within circuits.

Case Connection: COLLECTOR

Case connection at the collector allows for efficient heat dissipation, ensuring reliable performance.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching capabilities, ideal for high-speed processing and communication devices.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR42-TAPE-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

250 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR42-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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