Loading...

BSR40-TAPE-13

NXP Semiconductors

BSR40-TAPE-13 by NXP Semiconductors

BSR40-TAPE-13 by NXP Semiconductors is an NPN power BJT designed for switching applications. It features a max VCEsat of 0.5V, a collector current of 1A, and operates up to 150 °C. Its compact SO package ensures efficient surface mount integration in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,717 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,717

-

-

-

-

Anansix

USA . 2,050 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,050

-

-

-

-

Digiode

USA . 655 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

655

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 640 parts In-Stock

1+ parts

$22.050

100+ parts

-

1k+ parts

-

10k+ parts

-

640

$22.050

-

-

-

UNI Independent Distributors

Spain . 2,576 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,576

-

-

-

-

Corphita

USA . 1,953 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,953

-

-

-

-

Native Components

USA . 332 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

332

-

-

-

-

Northwest PG Solutions

USA . 264 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

264

-

-

-

-

Overview

Unlock the power of innovation with the BSR40-TAPE-13 from NXP Semiconductors! Designed for optimal switching performance, this high-quality NPN transistor excels in diverse applications, ensuring reliability and efficiency. With NXP's renowned reputation for excellence, customers can trust this robust solution to enhance their designs. Experience superior functionality and peace of mind, knowing that you’re backed by a leader in semiconductor technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy package ensures reliability and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: NPN

The NPN configuration is ideal for switching applications, enabling efficient control of current in electronic circuits.

Configuration: SINGLE

A single configuration allows for simpler circuit design and integration into various electronic systems.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently manage the flow of current, enhancing operational flexibility.

Surface Mount: YES

Being surface mount compatible allows for easy integration into compact and high-density circuit designs.

Maximum VCEsat: 0.5 V

A low saturation voltage minimizes power loss during operation, leading to increased efficiency in applications.

Package Shape: RECTANGULAR

The rectangular shape allows for efficient space utilization on PCBs, optimizing layout designs.

Terminal Form: FLAT

Flat terminals provide better surface contact, which enhances solder joint reliability and electrical performance.

No. of Terminals: 3

With three terminals, it provides essential connectivity for collector, emitter, and base, simplifying integration in circuits.

Package Style (Meter): SMALL OUTLINE

The small outline package saves space on circuit boards while providing solid performance, ideal for modern electronic devices.

Minimum DC Current Gain (hFE): 30

A minimum gain of 30 indicates that this transistor can provide sufficient amplification for various signal levels in applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature limit, it can function in demanding environments without compromising performance.

Maximum Collector-Base Capacitance: 12 pF

Low collector-base capacitance ensures faster switching speeds, making this transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 60 V

A maximum voltage rating of 60 V allows operation in a wide range of applications, supporting diverse circuit designs.

Transistor Element Material: SILICON

Silicon is a widely-used material for its excellent semiconductor properties, contributing to reliability and performance.

Maximum Turn On Time (ton): 250 ns

Fast turn-on time enhances speed in switching applications, improving overall system responsiveness.

Maximum Collector Current (IC): 1 A

With a maximum collector current of 1 A, this transistor can handle substantial loads, making it versatile for various applications.

Maximum Turn Off Time (toff): 1000 ns

A relatively quick turn-off time allows for efficient control in dynamic applications, reducing delays in circuit operation.

Terminal Position: SINGLE

Having a single terminal position simplifies layout and design, making the integration process straightforward.

Case Connection: COLLECTOR

Direct collector connection facilitates easy understanding of circuit configuration and enhances performance in applications.

Nominal Transition Frequency (fT): 100 MHz

A high transition frequency of 100 MHz ensures capability for high-speed applications, making this transistor suitable for modern electronics.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR40-TAPE-13 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

250 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR40-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20