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BSR41-TAPE-7

NXP Semiconductors

BSR41-TAPE-7 by NXP Semiconductors

BSR41-TAPE-7 from NXP Semiconductors is an NPN power BJT designed for switching applications. It features a max VCEsat of 0.5V, a collector current of 1A, and operates up to 150 °C. Its compact SO package ensures efficient surface mount integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,711 parts In-Stock

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Digiode

USA . 4,502 parts In-Stock

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Anansix

USA . 1,792 parts In-Stock

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Native Components

USA . 909 parts In-Stock

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$7.426

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909

$7.426

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One Stop Electronics

USA . 1,390 parts In-Stock

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$65.050

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$65.050

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UNI Independent Distributors

Spain . 1,924 parts In-Stock

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Corphita

USA . 1,521 parts In-Stock

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Northwest PG Solutions

USA . 514 parts In-Stock

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$7.278

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Overview

Unlock exceptional performance with the BSR41-TAPE-7 from NXP Semiconductors, a leader in innovative technology. This high-quality NPN transistor is designed for efficient switching applications, ensuring reliability even at elevated temperatures. Crafted with precision, it offers outstanding gain and rapid response times, making it ideal for diverse electronic designs. Elevate your projects with a trusted component that combines durability and efficiency, delivering unmatched value and performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and excellent thermal performance, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for efficient high-speed switching and amplification, which is ideal for a variety of electronic circuits.

Configuration: SINGLE

The single configuration simplifies the design and integration into circuits, making it easier to work with.

Transistor Application: SWITCHING

Designed specifically for switching applications, this product ensures quick response times and reliability in controlling electrical loads.

Surface Mount: YES

Surface mount capability allows for compact design and automated assembly processes, reducing PCB space requirements.

Maximum VCEsat: 0.5 V

A low VCEsat contributes to better efficiency, reducing power loss in the circuit during operation.

Package Shape: RECTANGULAR

The rectangular package shape optimizes circuit board space, allowing for higher density designs.

Terminal Form: FLAT

Flat terminals ensure better contact and alignment during assembly, enhancing reliability and performance.

No. of Terminals: 3

With three terminals, this transistor is straightforward to integrate into circuits, facilitating simple connection and control.

Package Style (Meter): SMALL OUTLINE

A small outline package style aids in minimizing space on PCBs, making it ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 50

A minimum gain of 50 ensures that even small input currents can control larger output loads, enhancing its functionality.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures increases the robustness of the transistor, enabling its use in demanding environments.

Maximum Collector-Base Capacitance: 12 pF

Low capacitance contributes to high-frequency performance, making this transistor suitable for fast-switching applications.

Maximum Collector-Emitter Voltage: 60 V

A high collector-emitter voltage rating allows for versatility in applications, supporting a wide range of operational voltages.

Transistor Element Material: SILICON

Silicon as the element material offers excellent electrical properties, stability, and reliability, making it a preferred choice for BJTs.

Maximum Turn On Time (ton): 250 ns

Fast turn-on time enhances the responsiveness of the circuit, allowing for efficient switching in high-speed applications.

Maximum Collector Current (IC): 1 A

Rated for a maximum collector current of 1 A, this transistor can handle significant loads, making it beneficial for various applications.

Maximum Turn Off Time (toff): 1000 ns

Quick turn-off time ensures minimal delay in switching applications, contributing to better overall circuit performance.

Terminal Position: SINGLE

Single terminal position simplifies routing and layout in integrated circuit designs, making it easier to implement.

Case Connection: COLLECTOR

With the collector connected in the case, it provides effective heat dissipation, enhancing the performance and longevity of the transistor.

Nominal Transition Frequency (fT): 100 MHz

A high transition frequency allows for operation at higher frequencies, which is beneficial for RF and high-speed switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR41-TAPE-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

50

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

250 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR41-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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