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BSR43,115

NXP Semiconductors

BSR43,115 by NXP Semiconductors

NXP Semiconductors' BSR43,115 is a NPN Power BJT transistor with 80V VCEO and 1A IC. It has a small outline package, suitable for switching applications with 100MHz fT. The device operates up to 150°C and features flat terminals for surface mount assembly.

Median Price

$0.207

Lifecycle Status

Suppliers In-Stock

23

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 60 parts In-Stock

1+ parts

$0.418

100+ parts

$0.259

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$0.160

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60

$0.418

$0.259

$0.160

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Newark

USA . 3 parts In-Stock

1+ parts

$1.340

100+ parts

$0.729

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3

$1.340

$0.729

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Future Electronics

Canada . 48,000 parts In-Stock

1+ parts

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$0.095

10k+ parts

$0.090

48,000

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-

$0.095

$0.090

Arrow

USA . 4,000 parts In-Stock

1+ parts

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$0.097

4,000

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$0.097

Verical

USA . 4,000 parts In-Stock

1+ parts

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$0.088

4,000

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$0.088

EBV Elektronik

Germany . 3,000 parts In-Stock

1+ parts

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3,000

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Chip1Stop

Japan . 1,000 parts In-Stock

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100+ parts

$0.161

1k+ parts

$0.125

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1,000

-

$0.161

$0.125

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RS (Exports)

UK . 720 parts In-Stock

1+ parts

-

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$0.253

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720

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$0.253

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Element14

Singapore . 3 parts In-Stock

1+ parts

-

100+ parts

$0.754

1k+ parts

$0.542

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3

-

$0.754

$0.542

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 50 parts In-Stock

1+ parts

$0.255

100+ parts

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50

$0.255

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Digiode

USA . 3,529 parts In-Stock

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$0.504

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3,529

$0.504

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TME

Poland . 474 parts In-Stock

1+ parts

$0.510

100+ parts

$0.251

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474

$0.510

$0.251

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Chip Stock

USA . 180,000 parts In-Stock

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IBS Electronics

USA . 48,000 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

$0.125

10k+ parts

$0.117

48,000

-

-

$0.125

$0.117

NAC Semi

USA . 38,000 parts In-Stock

1+ parts

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100+ parts

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$0.163

38,000

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$0.163

Sensible Micro Corp

USA . 3,330 parts In-Stock

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3,330

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Vyrian

USA . 2,098 parts In-Stock

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2,098

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LIBRA Elektronik GmbH

Germany . 1,427 parts In-Stock

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1,427

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Anansix

USA . 880 parts In-Stock

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880

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VNN

France . 667 parts In-Stock

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667

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A2Z Electronics, Inc.

USA . 402 parts In-Stock

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402

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QIE Inc.

USA . 145 parts In-Stock

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145

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ACDS - Activité Composants Distribution Service

France . 39 parts In-Stock

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39

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,852 parts In-Stock

1+ parts

$0.075

100+ parts

-

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2,852

$0.075

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Semicontronic

India . 2,265 parts In-Stock

1+ parts

$0.163

100+ parts

$0.159

1k+ parts

$0.158

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2,265

$0.163

$0.159

$0.158

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Argo Parts USA

USA . 488 parts In-Stock

1+ parts

$0.255

100+ parts

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10k+ parts

$0.247

488

$0.255

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$0.247

AZTECH Wire

Italy . 2,475 parts In-Stock

1+ parts

$0.340

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2,475

$0.340

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Corphita

USA . 1,762 parts In-Stock

1+ parts

$0.477

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1,762

$0.477

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Aztec Data Supply Inc.

USA . 3,567 parts In-Stock

1+ parts

$1.701

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3,567

$1.701

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Corohmni

South Africa . 726 parts In-Stock

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$1.845

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726

$1.845

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Perfect Parts

USA . 72,800 parts In-Stock

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72,800

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UNI Independent Distributors

Spain . 7,404 parts In-Stock

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iodParts Technologies Inc.

India . 4,480 parts In-Stock

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$0.206

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4,480

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$0.206

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Supply Digital

USA . 2,694 parts In-Stock

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2,694

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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Eastek

USA . 2,000 parts In-Stock

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$0.276

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2,000

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$0.276

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Continental Prestige Electronics

USA . 1,044 parts In-Stock

1+ parts

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100+ parts

$0.273

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1,044

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$0.273

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Netroflash

USA . 1,000 parts In-Stock

1+ parts

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100+ parts

$0.250

1k+ parts

$0.242

10k+ parts

$0.237

1,000

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$0.250

$0.242

$0.237

Cyclops Electronics Ltd (Excess)

UK . 39 parts In-Stock

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39

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Glotronic Ltd.

UK . 31 parts In-Stock

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31

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Overview

Discover the power of quality and reliability with the BSR43,115 by NXP Semiconductors. This Power Bipolar Junction Transistor (BJT) offers superior performance in switching applications, providing customers with seamless operation and efficiency. With a maximum collector-emitter voltage of 80V and a maximum operating temperature of 150°C, this NPN transistor is designed to deliver exceptional results. Trust NXP Semiconductors for top-tier products that bring value and benefits to your projects. Experience the advantages of the BSR43,115 today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the transistor, making it durable and reliable.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification and switching applications, offering high efficiency and fast switching speeds.

Configuration: SINGLE

Single configuration simplifies the design and usage of the transistor, making it easier to integrate into circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor is optimized for fast switching speeds and high efficiency.

Surface Mount: YES

Surface mount design allows for easy and convenient installation onto circuit boards, saving space and reducing assembly time.

Maximum Power Dissipation (Abs): 1 W

With a maximum power dissipation of 1 W, this transistor can handle moderate power levels without overheating or damage.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and soldering onto circuit boards, ensuring reliable connections.

Minimum DC Current Gain (hFE): 50

A minimum DC current gain of 50 ensures proper amplification and signal processing, making this transistor suitable for a variety of applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this transistor can withstand high ambient temperatures without performance degradation.

Maximum Collector-Emitter Voltage: 80 V

With a maximum collector-emitter voltage of 80 V, this transistor can handle high voltage applications with ease.

Transistor Element Material: SILICON

Silicon material offers high reliability and performance, making this transistor suitable for a wide range of operating conditions.

Maximum Collector Current (IC): 1 A

Capable of handling a maximum collector current of 1 A, this transistor is suitable for low to moderate power applications.

Terminal Finish: TIN

Tin terminal finish ensures reliable soldering connections and long-term stability in circuit applications.

Nominal Transition Frequency (fT): 100 MHz

With a nominal transition frequency of 100 MHz, this transistor offers high-speed performance ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR43,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

50

JEDEC-95 Code:

TO-243AA

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BSR43,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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