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BSR42-TAPE-7

NXP Semiconductors

BSR42-TAPE-7 by NXP Semiconductors

BSR42-TAPE-7 from NXP Semiconductors is an NPN power BJT ideal for switching applications. It features a max VCEsat of 0.5V, a collector current of 1A, and operates up to 150 °C. Its compact SO package ensures efficient surface mount integration.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 2,733 parts In-Stock

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Anansix

USA . 1,124 parts In-Stock

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Digiode

USA . 390 parts In-Stock

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One Stop Electronics

USA . 454 parts In-Stock

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$62.050

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Northwest PG Solutions

USA . 1,818 parts In-Stock

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UNI Independent Distributors

Spain . 1,255 parts In-Stock

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Native Components

USA . 784 parts In-Stock

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Corphita

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Overview

Unlock unparalleled performance with the BSR42-TAPE-7 from NXP Semiconductors, a trusted leader in innovative technology. This high-quality NPN power transistor is designed for efficient switching applications, ensuring reliability and optimal operation even in demanding environments. With its compact surface mount design, it seamlessly integrates into various systems, providing exceptional value through enhanced energy efficiency and reduced heat generation. Choose BSR42-TAPE-7 for your next project and experience the superior benefits of NXP's commitment to excellence!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This durable and lightweight material provides excellent protection against environmental factors, ensuring reliability and longevity.

Polarity or Channel Type: NPN

NPN transistors are widely used in amplification and switching applications, making this device versatile for various electronic circuits.

Configuration: SINGLE

The single configuration allows for ease of integration into circuits without the complexity of multiple transistor configurations.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor ensures efficient operation in digital circuits.

Surface Mount: YES

Surface mount technology allows for a compact design, saving space on printed circuit boards.

Maximum VCEsat: 0.5 V

A low saturation voltage enhances efficiency by minimizing power loss during operation, leading to better thermal management.

Package Shape: RECTANGULAR

The rectangular shape facilitates efficient layout design on circuit boards, enhancing manufacturability.

Terminal Form: FLAT

Flat terminals provide ease of soldering and better thermal contact, improving the overall performance of the device.

No. of Terminals: 3

With three terminals, this transistor simplifies connections and enhances circuit design flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for high-density circuit designs, making it ideal for modern compact electronic systems.

Minimum DC Current Gain (hFE): 30

A minimum current gain of 30 ensures adequate amplification, making it suitable for various applications including signal processing.

Maximum Operating Temperature: 150 °C

High operating temperature capability enables reliability under stress, suitable for demanding applications.

Maximum Collector-Base Capacitance: 12 pF

Low capacitance minimizes charge storage effects, enhancing high-frequency performance in switching applications.

Maximum Collector-Emitter Voltage: 80 V

With a high voltage rating, this transistor can be used in applications requiring significant voltage handling, adding versatility.

Transistor Element Material: SILICON

Silicon-based transistors offer excellent thermal stability and performance, making them a standard choice in the industry.

Maximum Turn On Time (ton): 250 ns

Fast turn-on time allows for high-speed switching, beneficial in digital circuits and high-frequency applications.

Maximum Collector Current (IC): 1 A

Capable of handling a 1 A collector current, this transistor is suitable for moderate power applications.

Maximum Turn Off Time (toff): 1000 ns

A turn-off time of 1000 ns ensures quick recovery, essential for maintaining signal integrity in high-frequency applications.

Terminal Position: SINGLE

A single terminal position simplifies the layout and integration into various circuit designs, reducing complexity.

Case Connection: COLLECTOR

The case connection to the collector enables effective heat dissipation, enhancing device performance under load.

Nominal Transition Frequency (fT): 100 MHz

With a transition frequency of 100 MHz, this transistor offers excellent performance in applications requiring high-speed operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) BSR42-TAPE-7 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Base Capacitance:

12 pF

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-PSSO-F3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

1000 ns

Maximum Turn On Time (ton):

250 ns

Maximum VCEsat:

.5 V

Trade Compliance

BSR42-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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