Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
BFU760F by NXP Semiconductors is an NPN RF small signal BJT designed for amplifier applications. It features a high transition frequency of 45 GHz, operates at max collector current of 70 mA, and withstands temperatures up to 150 °C. Ideal for KA band circuits in compact designs.
Median Price
-
Lifecycle Status
Suppliers In-Stock
5
In-Stock Inventory
1k+
Component Sense
1+ parts
100+ parts
1k+ parts
10k+ parts
Chip Stock
Digiode
Anansix
Vyrian
Native Components
$0.883
Northwest PG Solutions
$0.971
One Stop Electronics
$24.050
Kepictronics
Authorized Procurement Solutions
A-Z Elektronik GmbH
Alle Elektronik GmbH
UNI Independent Distributors
Corphita
The use of plastic/epoxy for the package body enhances durability and reliability, making it suitable for various applications.
As an NPN transistor, this product allows for efficient signal amplification and is compatible with a wide range of circuits.
A single configuration simplifies the design and integration into circuits, providing ease of use in applications.
Designed specifically for amplification, this transistor excels in boosting signal strength for audio and RF applications.
Being a surface mount device (SMD), it saves space on PCB and allows for automated assembly, increasing manufacturing efficiency.
The rectangular shape is suitable for high-density PCB layouts, facilitating compact designs.
Flat terminals provide reliable electrical connections and ease of handling during assembly.
Operating in the KA band allows for applications in high-frequency communication systems, enhancing signal quality.
With 4 terminals, this transistor offers multiple connectivity options, making it versatile for different circuit designs.
The small outline package style makes it ideal for compact devices where space is at a premium.
The high maximum operating temperature makes this transistor suitable for demanding applications, ensuring reliability in harsh environments.
With a maximum collector-emitter voltage of 2.8 V, it is ideal for low-voltage applications, ensuring safe and efficient operation.
Silicon germanium material provides excellent high-frequency performance, making this transistor suitable for RF applications.
A maximum collector current of 0.07 A ensures sufficient power handling for various amplifier applications.
The tin terminal finish enhances solderability, ensuring reliable connections during assembly and operation.
Dual terminal positioning offers flexibility in circuit design and layout, accommodating various PCB configurations.
A maximum reflow time of 30 seconds minimizes thermal stress on the component, ensuring longevity and performance.
With a peak reflow temperature of 260 °C, this transistor can withstand the soldering process without compromising integrity.
The high transition frequency of 45000 MHz makes this transistor an excellent choice for high-speed and RF applications.
RF Small Signal Bipolar Junction Transistors (BJT) BFU760F attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors
Additional Features:
Maximum Collector Current (IC):
Maximum Collector-Emitter Voltage:
Configuration:
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
Nominal Transition Frequency (fT):
BFU760F Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.21.00
PCN Packaging - Date Code Extended 18/Jul/2013 All Dev Label Update 15/Dec/2020
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
1N4148
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Terminal Finish: MATTE TIN; Maximum Operating Temperature: 200 Cel; Maximum Output Current: .15 A; JESD-609 Code: e3;
SMBJ18CA
KYOCERA AVX
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS138
General Semiconductor
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Minimum DS Breakdown Voltage: 50 V; Qualification: Not Qualified;
2N2222A
Aeroflex/metelics
NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): .8 A; Package Shape: ROUND; Transistor Application: SWITCHING;
Surge Components
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; No. of Terminals: 3;
LM555CMX
National Semiconductor
PULSE; RECTANGULAR; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Surface Mount: YES;
Diodes Incorporated
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
2N7002
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
USBLC6-2SC6
STMicroelectronics
USBLC6-2SC6 by STMicroelectronics is a unidirectional transient voltage suppressor diode with a breakdown voltage of 6V. It has a max clamping voltage of 17V and operates in temperatures ranging from -40 to 125°C. This device, with dual terminals and matte tin finish, is ideal for protecting sensitive electronics from voltage spikes in various applications.
LM2931AZ-5.0G
Onsemi
LM2931AZ-5.0G by Onsemi is a fixed positive single output LDO regulator with a nominal output voltage of 5V and max output current of 0.1A. It has a max dropout voltage of 0.6V, making it suitable for applications requiring stable power supply in temperature-sensitive environments up to 125°C. The package style is cylindrical with wire terminals, ideal for rail packing methods in various electronic devices.
STM32H750VBT6
STM32H750VBT6 by STMicroelectronics is a 32-bit microcontroller with Cortex-M7 CPU, offering 20 timers and 16 DMA channels. It features 2 DAC and 16 ADC channels, suitable for industrial applications requiring high-speed processing up to 48 MHz. With extensive connectivity options like FDCAN, Ethernet, and USB, it provides versatile solutions in a compact package.
1N4148WS
Lite-on Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LAN8720AI-CP-TR
Microchip Technology
LAN8720AI-CP-TR by Microchip is an Ethernet transceiver with 100 Mbps data rate, operating at -40 to 85 °C. It features a 3.3 V supply voltage, 54 mA supply current, and TS 16949 screening level. Ideal for network interfaces in industrial applications due to its compact square package and low profile design.
Comchip Technology
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE;
Silicon Standard
International Components
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0; Maximum Reverse Recovery Time: .004 us;
MBRS130LT3G
Rochester Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: J BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
LM317T
Integrated Power Semiconductors
Other Regulators; No. of Terminals: 3; Operating Temperature (TJ-Min): 0 Cel; Terminal Pitch: 2.54 mm; Maximum Load Regulation (%): 1.5 %; Nominal Dropout Voltage-1: 3 V;
USB2514BI-AEZG
USB2514BI-AEZG by Microchip is a BUS CONTROLLER IC with 36 terminals, operating at 3.3V, supporting I2C, SMBUS, and USB buses. It has a clock frequency of up to 24MHz and can withstand industrial temperatures from -40°C to 85°C. This chip carrier package is surface mountable and suitable for various applications requiring USB connectivity.
LM358MX
Fairchild Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
BFS17W
Siemens
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Package Style (Meter): SMALL OUTLINE;
MMBT5179
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 900 MHz; Maximum Collector Current (IC): .05 A; Terminal Form: GULL WING;
MPSH10RLRPG
MPSH10RLRPG by Onsemi is an NPN RF BJT transistor with a max operating temperature of 150°C. It has a min DC current gain of 60 and a nominal transition frequency of 650 MHz, making it suitable for amplifier applications in the ultra-high-frequency band. With a max collector-emitter voltage of 25V and a power dissipation of 0.35W, this transistor is ideal for high-frequency circuit designs.
KSC1393R
KSC1393R by Onsemi is an NPN RF BJT with a single configuration for amplifier applications. It offers a min power gain of 20 dB, DC current gain of 40, and operates in the very high frequency band up to 700 MHz. This transistor has a max collector-emitter voltage of 30V and can handle a max power dissipation of 0.25W at an ambient temperature of 150 °C.
BFR93AW
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .05 A; Maximum Power Dissipation Ambient: .3 W;
2N3569
Thomson-csf Semiconductors
NPN; Surface Mount: NO; Nominal Transition Frequency (fT): 60 MHz; Maximum Collector Current (IC): .5 A; JESD-30 Code: O-XBCY-W4; JEDEC-95 Code: TO-105;
BFM520,115
NXP Semiconductors
NXP Semiconductors' BFM520,115 is a NPN RF BJT transistor with 2 elements for switching applications. It operates in L Band with max fT of 9000 MHz. With a max IC of 0.07 A and hFE of 60, it's ideal for high-frequency signal amplification in compact electronic devices.
MMBT5770
The Onsemi MMBT5770 is an NPN RF BJT transistor with a max collector-emitter voltage of 15V and fT of 600MHz. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals for surface mounting. With a min hFE of 30, it offers 0.225W power dissipation and 0.00009A max collector current.
BFR93A,235
NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.
BFP650FH6327XTSA1
RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;
NE85634-T1-A
Nec Electronics America
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
2SC5646A-TL-H
Onsemi's 2SC5646A-TL-H is an NPN RF BJT with max power dissipation of 0.1W, hFE of 100, and fT of 8000MHz. Ideal for applications requiring high-frequency signal amplification in a surface-mount configuration.
CPH6021
CPH6021 by Onsemi is a PNP BJT transistor for amplifier applications. It operates in the ultra-high frequency band with a max fT of 10,000 MHz. With a max IC of 0.1 A and hFE of 60, it has a package style of small outline and can handle up to 0.7 W power dissipation at 150 °C.
KSC1674O
KSC1674O by Onsemi is an NPN RF BJT with a max VCEsat of 0.3V, ideal for amplifier applications in the UHF band. It has a min hFE of 70, max fT of 600MHz, and can handle a max IC of 0.02A.
MMBTH81D87Z
MMBTH81D87Z by National Semiconductor is a PNP BJT transistor with a max collector-emitter voltage of 20V and a nominal transition frequency of 600MHz. It is designed for amplifier applications in the very high-frequency band, featuring a small outline package with gull wing terminals for surface mount assembly.
BFU710F,115
RF Small Signal Bipolar Transistors; Terminal Finish: TIN; Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
BFR106E6327HTSA1
BFR106E6327HTSA1 by Infineon Technologies is a NPN RF Small Signal BJT transistor with a max power dissipation of 0.7W and a min DC current gain of 70. It is commonly used as an amplifier in applications requiring high frequency performance up to 5000 MHz.
MCH4017-TL-H
MCH4017-TL-H by Onsemi is an NPN RF BJT with 4 terminals, operating at 150°C max. It has a transition frequency of 10GHz, 0.1A collector current, and 12V collector-emitter voltage. Ideal for ultra-high frequency applications due to its small outline package and high power dissipation of 0.45W.
BFU520VL
NXP Semiconductors' BFU520VL is a NPN BJT transistor with 4 terminals, ideal for L Band applications. With a max fT of 10500 MHz and hFE of 60, it operates at temperatures from -40 to 150 °C, making it suitable for high-frequency amplifier circuits in various electronic devices.
CS9018
CS9018 by Onsemi is a N-CHANNEL BJT with VCEsat of 0.6V, hFE of 29, and fT of 600MHz. Ideal for high-frequency applications due to its low VCEsat and high transition frequency. Packaged in plastic/epoxy, it has 3 terminals and can handle up to 12V.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
BFU760F,115
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 155;
BFU790F,115
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .234 W; Maximum Collector Current (IC): .1 A; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1;
BFU725F/N1,115
BFU725F/N1,115 by NXP Semiconductors is an NPN RF Small Signal BJT with a max power dissipation of 0.136W and min DC current gain of 160. It features silicon germanium material and can handle a max collector current of 0.04A. Ideal for applications requiring high-frequency signal amplification in compact electronic devices.
BFU730F,115
NXP Semiconductors' BFU730F,115 is an NPN RF BJT with max. power dissipation of 0.197W and min. DC current gain of 205. Ideal for surface mount applications, it has a max. collector current of 0.03A and uses silicon germanium material.
BFU730LXZ
The NXP Semiconductors BFU730LXZ is an NPN RF Small Signal BJT with a max power dissipation of 0.16W and min DC current gain of 205. Ideal for applications requiring a max collector current of 0.03A, such as surface mount designs in telecommunications and wireless communication systems.
BFU710F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 43000 MHz; Maximum Collector Current (IC): .01 A; Terminal Finish: TIN;
BFU725F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Power Dissipation (Abs): .136 W; Maximum Collector Current (IC): .04 A;
BFU725F,115
BFU725F,150
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; JESD-30 Code: R-PDSO-F4;
BFU725F,240
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 70000 MHz; Maximum Collector Current (IC): .04 A; Case Connection: EMITTER;
BFU725F/N1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .04 A; Moisture Sensitivity Level (MSL): 1;
BFU725FT/R
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .136 W; Maximum Collector Current (IC): .04 A; Minimum DC Current Gain (hFE): 300; No. of Elements: 1;
BFU730F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 55000 MHz; Maximum Collector Current (IC): .03 A; No. of Elements: 1;
BFU730LX
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 53000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .03 A;
BFU768F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 110000 MHz; Maximum Power Dissipation (Abs): .22 W; Maximum Collector Current (IC): .07 A;
BFU768F,115
The NXP Semiconductors BFU768F,115 is an NPN RF BJT with a max power dissipation of 0.22W and min hFE of 155. Ideal for applications requiring a max collector current of 0.07A, such as surface-mount RF small signal amplification circuits.
BFU790F
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 25000 MHz; Maximum Collector Current (IC): .1 A; Package Body Material: PLASTIC/EPOXY;
Supply Digital Components
$106.00
$54.25
$11.90
$7.29
Quantity
12,000 In-Stock
Total price ≈ $80,197.29
© 2023 All rights reserved