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BFU725FT/R

NXP Semiconductors

BFU725FT/R by NXP Semiconductors

BFU725FT/R by NXP Semiconductors is an NPN RF small signal BJT ideal for high-frequency applications. It features a max power dissipation of 0.136 W, a min DC current gain of 300, and supports up to 0.04 A collector current. This transistor is perfect for amplifying signals in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,560 parts In-Stock

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Anansix

USA . 1,161 parts In-Stock

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Digiode

USA . 334 parts In-Stock

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334

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Native Components

USA . 666 parts In-Stock

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$0.760

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666

$0.760

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Northwest PG Solutions

USA . 977 parts In-Stock

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$0.836

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977

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One Stop Electronics

USA . 667 parts In-Stock

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$50.050

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UNI Independent Distributors

Spain . 7,981 parts In-Stock

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Corphita

USA . 3,441 parts In-Stock

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Overview

Unlock the potential of your RF applications with the BFU725FT/R from NXP Semiconductors, a leader in innovation and quality. This premium NPN bipolar junction transistor, engineered with advanced Silicon Germanium technology, ensures exceptional performance and reliability. Experience superior signal integrity and efficiency for your projects, whether in telecommunications, consumer electronics, or industrial systems. Upgrade to the BFU725FT/R and elevate your designs with unmatched value and cutting-edge advantages!

Feature Benefit Bullets

Polarity or Channel Type: NPN

The NPN configuration provides high-speed switching performance, making this transistor suitable for various amplification and switching applications.

Surface Mount: YES

The surface-mount design enables easy integration into compact circuit boards, reducing overall space requirements and allowing for automated assembly.

Maximum Power Dissipation (Abs): 0.136 W

With a maximum power dissipation of 0.136 W, this transistor can handle moderate power levels while efficiently managing heat, thus improving reliability in most applications.

Minimum DC Current Gain (hFE): 300

A minimum DC current gain of 300 ensures strong amplification, allowing for effective signal processing in low-power applications, which is crucial for battery-operated devices.

Transistor Element Material: SILICON GERMANIUM

The use of Silicon Germanium provides improved frequency response and lower noise characteristics, enhancing performance in high-speed communication systems.

Maximum Collector Current (IC): 0.04 A

With a maximum collector current of 0.04 A, this transistor can reliably drive moderately powered loads, making it versatile for different circuit applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU725FT/R attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Minimum DC Current Gain (hFE):

300

No. of Elements:

1

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

BIP RF Small Signal

Surface Mount:

YES

Transistor Element Material:

SILICON GERMANIUM

Trade Compliance

BFU725FT/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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