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BFU730F

NXP Semiconductors

BFU730F by NXP Semiconductors

BFU730F by NXP Semiconductors is an NPN RF small signal BJT designed for amplifier applications. It features a max collector-emitter voltage of 2.8V, a nominal transition frequency of 55GHz, and comes in a compact surface mount package. Ideal for KA band usage, it ensures efficient performance in communication systems.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,387 parts In-Stock

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Anansix

USA . 1,249 parts In-Stock

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Digiode

USA . 484 parts In-Stock

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484

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Classic Components Corporation

USA . 50 parts In-Stock

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50

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Cyclops Electronics Ltd

UK . 7 parts In-Stock

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7

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Native Components

USA . 136 parts In-Stock

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$0.660

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136

$0.660

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Northwest PG Solutions

USA . 3 parts In-Stock

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$0.726

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One Stop Electronics

USA . 593 parts In-Stock

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$31.050

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593

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 42,000 parts In-Stock

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Authorized Procurement Solutions

USA . 22,000 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,578 parts In-Stock

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UNI Independent Distributors

Spain . 4,628 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,385 parts In-Stock

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Corphita

USA . 1,334 parts In-Stock

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Overview

Unlock unparalleled performance with the BFU730F by NXP Semiconductors, a standout in RF Small Signal Bipolar Transistors. Designed for precision amplification, this compact gem delivers reliability and superior quality, thanks to NXP's industry-leading expertise. Ideal for advanced communication applications, it ensures seamless signal integrity, empowering your projects with enhanced efficiency and reduced energy consumption. Elevate your technology with the trusted innovation of NXP!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides durability and resistance to environmental factors, making this BJT suitable for a variety of applications.

Polarity or Channel Type: NPN

An NPN type configuration allows for common-emitter amplifications, making this transistor effective in amplifying weak signals.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making it easier to implement in various applications.

Transistor Application: AMPLIFIER

Designed for amplification, this BJT is ideal for use in audio and RF applications where signal strength needs to be increased.

Surface Mount: YES

Surface mount capability allows for compact designs and automated assembly, enhancing the product's versatility in modern electronic applications.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on circuit boards, allowing for higher density designs.

Terminal Form: FLAT

Flat terminals improve surface contact for better electrical performance and ease of soldering.

Highest Frequency Band: KA BAND

Operating in the Ka band makes this BJT suitable for high-frequency applications, such as satellite communications and radar systems.

No. of Terminals: 4

Four terminals provide greater flexibility in circuit design and allow for more complex configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is conducive to space-saving designs, allowing for more compact electronic devices.

Maximum Collector-Emitter Voltage: 2.8 V

With a relatively low maximum collector-emitter voltage, this BJT is particularly suited for low-voltage applications, enhancing safety.

Transistor Element Material: SILICON GERMANIUM

Silicon-germanium materials offer improved performance at high frequencies, making this transistor effective in advanced communication applications.

Maximum Collector Current (IC): 0.03 A

A maximum collector current of 30 mA makes this BJT well-suited for small-signal applications, where low power dissipation is crucial.

Terminal Position: DUAL

Dual terminal positions facilitate flexible circuit design, allowing engineers to optimize layout and performance.

Nominal Transition Frequency (fT): 55000 MHz

A high transition frequency of 55 GHz indicates this transistor's capability to operate at very high speeds, making it ideal for modern communication systems.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFU730F attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

2.8 V

Configuration:

Highest Frequency Band:

KA BAND

JESD-30 Code:

R-PDSO-F4

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON GERMANIUM

Nominal Transition Frequency (fT):

Trade Compliance

BFU730F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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