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2PA1015Y-AMMO

NXP Semiconductors

2PA1015Y-AMMO by NXP Semiconductors

2PA1015Y-AMMO from NXP is a PNP small signal BJT designed for amplifier applications. It features a max VCEsat of 0.3V, hFE of 25, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in various circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,708 parts In-Stock

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2,708

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Anansix

USA . 2,223 parts In-Stock

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2,223

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Digiode

USA . 1,550 parts In-Stock

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1,550

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Native Components

USA . 183 parts In-Stock

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$0.695

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Northwest PG Solutions

USA . 2,092 parts In-Stock

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$0.764

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2,092

$0.764

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One Stop Electronics

USA . 1,063 parts In-Stock

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$55.050

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1,063

$55.050

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UNI Independent Distributors

Spain . 1,345 parts In-Stock

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Corphita

USA . 65 parts In-Stock

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Overview

Elevate your electronic designs with the 2PA1015Y-AMMO from NXP Semiconductors, a trusted leader in innovative technology. This high-quality PNP transistor excels in amplification applications, delivering reliable performance even under demanding conditions. With its robust design and efficient functionality, it ensures optimal signal integrity, making it perfect for audio systems, communication devices, and more. Choose NXP for exceptional quality and value that empowers your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and protection, making the transistor suitable for a variety of environments.

Polarity or Channel Type: PNP

PNP transistors are effective for amplification and switching applications, offering versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit integration and keeps the design compact.

Transistor Application: AMPLIFIER

Designed for amplification, this BJT is ideal for audio and signal processing applications.

Maximum VCEsat: 0.3 V

A low VCEsat indicates efficient performance and lower power losses, making it suitable for low-voltage applications.

Package Shape: ROUND

The round package shape allows for easy integration into various board designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical connection and are well-suited for prototyping and assembly.

No. of Terminals: 3

With three terminals, this transistor has a straightforward pin configuration, facilitating easy connections in circuits.

Package Style (Meter): CYLINDRICAL

The cylindrical package style aids in thermal management and provides a compact footprint.

Minimum DC Current Gain (hFE): 25

A minimum current gain of 25 ensures adequate amplification, making it effective for low signal applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for use in demanding environments, improving reliability.

Maximum Collector-Base Capacitance: 7 pF

A low collector-base capacitance enhances switching speed, making this transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

With a voltage rating of 50 V, this transistor can handle substantial voltage levels while ensuring operational safety.

Transistor Element Material: SILICON

Silicon is a widely-used semiconductor material, recognized for its excellent performance and reliability.

Maximum Collector Current (IC): 0.15 A

The ability to handle up to 0.15 A makes it suitable for various linear and switching applications.

Terminal Position: BOTTOM

Bottom terminal position allows for efficient layout designs on printed circuit boards.

Nominal Transition Frequency (fT): 80 MHz

A transition frequency of 80 MHz indicates good performance in high-frequency applications, such as RF amplifiers.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PA1015Y-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PA1015Y-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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