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2PA1015GR-AMMO

NXP Semiconductors

2PA1015GR-AMMO by NXP Semiconductors

2PA1015GR-AMMO by NXP Semiconductors is a PNP small signal BJT designed for amplifier applications. It features a max VCEsat of 0.3V, hFE of 25, and operates up to 150 °C. Its cylindrical plastic package with through-hole terminals ensures easy integration in circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,081 parts In-Stock

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Vyrian

USA . 2,604 parts In-Stock

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Anansix

USA . 1,668 parts In-Stock

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Northwest PG Solutions

USA . 1,522 parts In-Stock

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$3.432

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One Stop Electronics

USA . 808 parts In-Stock

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$49.050

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808

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UNI Independent Distributors

Spain . 3,535 parts In-Stock

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Corphita

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Native Components

USA . 339 parts In-Stock

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Overview

Unlock superior performance with the 2PA1015GR-AMMO from NXP Semiconductors, a trusted leader in innovative solutions. This high-quality PNP small signal BJT enhances audio and signal processing applications with exceptional amplification capabilities. Its robust design ensures reliability even under demanding conditions, making it ideal for consumer electronics and industrial devices. Experience efficiency and excellence that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The durable plastic/epoxy body material provides effective insulation and protection against environmental factors, making it reliable for various applications.

Polarity or Channel Type: PNP

The PNP configuration is beneficial for applications requiring high-side switching, enhancing its usability in diverse electronic circuits.

Configuration: SINGLE

A single configuration makes the transistor easy to integrate into circuits, simplifying design and reducing potential failure points.

Transistor Application: AMPLIFIER

Optimized for amplifier applications, this transistor provides excellent gain characteristics, suitable for audio and signal processing tasks.

Maximum VCEsat: 0.3 V

A low VCEsat enhances efficiency by minimizing power loss during operation, which is essential for battery-operated and high-efficiency circuits.

Package Shape: ROUND

The round package shape offers compactness and ease of mounting on PCBs, making it suitable for space-constrained designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical connections, ensuring reliability and stability in applications subject to vibration.

No. of Terminals: 3

With three terminals, this transistor allows for simple connections while maintaining ease of use in circuit designs.

Package Style (Meter): CYLINDRICAL

The cylindrical package style enhances thermal management and provides a unique aesthetic, suitable for specialized applications.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain of 25 ensures adequate amplification for various signals, making this transistor versatile for amplification tasks.

Maximum Operating Temperature: 150 °C

A high operating temperature rating allows this transistor to be used in demanding environments, ensuring longevity and reliability.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance ensures faster switching speeds, making this transistor suitable for high-frequency applications.

Maximum Collector-Emitter Voltage: 50 V

A maximum collector-emitter voltage of 50 V enables operation in higher voltage applications, increasing its versatility across designs.

Transistor Element Material: SILICON

Silicon material is known for its excellent electronic properties, making it a go-to choice for efficient and reliable transistor applications.

Maximum Collector Current (IC): 0.15 A

The ability to handle up to 0.15 A collector current allows this transistor to be used in a range of power applications without overheating.

Terminal Position: BOTTOM

Bottom-positioned terminals contribute to easier PCB layout designs and can improve thermal dissipation during operation.

Nominal Transition Frequency (fT): 80 MHz

A nominal transition frequency of 80 MHz allows for operation in RF applications, making this transistor suitable for a wide range of communication devices.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PA1015GR-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PA1015GR-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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