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2PA1015GR-T/R

NXP Semiconductors

2PA1015GR-T/R by NXP Semiconductors

2PA1015GR-T/R by NXP is a PNP small signal BJT ideal for switching applications. It features a max VCEsat of 0.3V, hFE of 200, and operates up to 150 °C. This cylindrical transistor with through-hole terminals supports efficient circuit designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Digiode

USA . 4,304 parts In-Stock

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Vyrian

USA . 3,355 parts In-Stock

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Anansix

USA . 90 parts In-Stock

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90

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Native Components

USA . 29 parts In-Stock

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$8.335

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Northwest PG Solutions

USA . 1,459 parts In-Stock

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$9.168

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$8.251

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One Stop Electronics

USA . 474 parts In-Stock

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$64.050

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UNI Independent Distributors

Spain . 8,378 parts In-Stock

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Corphita

USA . 4,917 parts In-Stock

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Overview

Unlock the power of precision with the 2PA1015GR-T/R from NXP Semiconductors, a trusted leader in innovative electronics. This high-quality PNP transistor excels in switching applications, delivering reliable performance even in demanding environments. With its exceptional gain and robust thermal stability, the 2PA1015GR-T/R ensures superior efficiency for your designs, making it the ideal choice for everything from consumer electronics to industrial automation. Elevate your projects with NXP’s proven reliability and enjoy unparalleled value!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material ensures durability and protection against environmental factors, making this transistor suitable for various applications.

Polarity or Channel Type: PNP

Being a PNP transistor, it is ideal for applications requiring high-speed switching and efficient signal amplification, especially in low-side switching configurations.

Configuration: SINGLE

The single configuration allows for compact design and easy integration into circuits, making it suitable for various electronic applications.

Transistor Application: SWITCHING

Designed for switching applications, this transistor can efficiently control power and signals, making it a versatile choice for digital and analog circuits.

Maximum VCEsat: 0.3 V

A low saturation voltage enhances efficiency by minimizing power loss during operation, which is critical in battery-powered and energy-sensitive applications.

Package Shape: ROUND

The round package shape allows easy assembly and integration into diverse circuit boards, supporting various layout designs.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical support and reliable electrical connections, making it ideal for prototyping and permanent installations.

Number of Terminals: 3

With three terminals, this transistor can easily interface with various circuit configurations, providing flexibility in designs.

Package Style (Meter): CYLINDRICAL

The cylindrical packaging style facilitates uniform thermal dissipation, which is critical for high-efficiency operation.

Minimum DC Current Gain (hFE): 200

A high DC current gain allows this transistor to amplify signals effectively, making it suitable for applications requiring significant signal enhancement.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can function reliably in demanding environments without degradation in performance.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance ensures high-frequency performance, making this transistor suitable for RF and high-speed applications.

Maximum Collector-Emitter Voltage: 50 V

A robust maximum collector-emitter voltage allows this transistor to be used in a variety of power applications while maintaining reliability.

Transistor Element Material: SILICON

Silicon as a semiconductor material ensures stability and performance across a broad range of applications, from consumer electronics to industrial systems.

Maximum Collector Current (IC): 0.15 A

The maximum collector current rating enables the transistor to handle moderate loads effectively, making it suitable for various driving applications.

Terminal Position: BOTTOM

Bottom terminal positioning facilitates efficient PCB layouts and allows for effective heat dissipation when mounted.

Nominal Transition Frequency (fT): 80 MHz

A nominal transition frequency of 80 MHz supports high-speed switching applications, making this transistor an excellent choice for modern digital circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PA1015GR-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PA1015GR-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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