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2PA1015L-AMMO

NXP Semiconductors

2PA1015L-AMMO by NXP Semiconductors

2PA1015L-AMMO by NXP is a PNP small signal BJT designed for amplifier applications. It features a max VCEsat of 0.3V, hFE of 25, and operates up to 150 °C. This cylindrical through-hole transistor is ideal for efficient signal amplification in compact designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,117 parts In-Stock

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Digiode

USA . 1,858 parts In-Stock

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Anansix

USA . 423 parts In-Stock

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423

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Native Components

USA . 449 parts In-Stock

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$0.259

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$0.248

449

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Northwest PG Solutions

USA . 847 parts In-Stock

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$0.284

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$0.251

847

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One Stop Electronics

USA . 562 parts In-Stock

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$27.050

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562

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UNI Independent Distributors

Spain . 7,392 parts In-Stock

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Corphita

USA . 4,751 parts In-Stock

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Overview

Elevate your electronic designs with the 2PA1015L-AMMO from NXP Semiconductors—a trusted name in innovation. This high-quality PNP bipolar junction transistor excels in amplifier applications, ensuring superior performance and reliability. Designed with precision, it offers outstanding efficiency and resilience up to 150 °C. Ideal for compact circuits and demanding environments, this versatile solution delivers exceptional value, empowering you to create cutting-edge technology with confidence.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and resistance to environmental factors, making the transistor suitable for various applications.

Polarity or Channel Type: PNP

As a PNP transistor, it is ideal for applications where switching and amplification in the positive leg of the circuit are required.

Configuration: SINGLE

A single configuration allows for straightforward integration into circuits while optimizing space and efficiency.

Transistor Application: AMPLIFIER

Designed for amplification, this transistor provides reliable performance in audio and signal processing applications.

Maximum VCEsat: 0.3 V

A low saturation voltage indicates efficient operation, which reduces power loss and enhances overall circuit performance.

Package Shape: ROUND

The round package shape can facilitate better thermal management and fit in tighter spaces within electronic assemblies.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide robust mechanical strength and ease of handling during PCB assembly.

No. of Terminals: 3

Three-terminal design simplifies connections and supports various circuit configurations, enhancing versatility.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compatible with a wide range of applications while providing efficient heat dissipation.

Minimum DC Current Gain (hFE): 25

A minimum gain of 25 ensures that this transistor can effectively amplify weak signals, making it ideal for low-signal applications.

Maximum Operating Temperature: 150 °C

High operating temperature capability enhances reliability in harsh environments and demanding applications.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance leads to better high-frequency response, making this transistor suitable for RF applications.

Maximum Collector-Emitter Voltage: 50 V

A collector-emitter voltage rating of 50V allows for versatile usage in various electronic designs without risk of breakdown.

Transistor Element Material: SILICON

Silicon material offers excellent performance characteristics, including efficiency and reliability for a wide range of applications.

Maximum Collector Current (IC): 0.15 A

With a collector current limit of 0.15 A, this transistor can effectively handle moderate current levels in various circuits.

Terminal Position: BOTTOM

Bottom terminal positioning can optimize layout in compact designs while enhancing connectivity with the PCB.

Nominal Transition Frequency (fT): 80 MHz

A transition frequency of 80 MHz indicates suitability for high-frequency applications, such as RF and audio circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PA1015L-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PA1015L-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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