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2PA1015BL-T/R

NXP Semiconductors

2PA1015BL-T/R by NXP Semiconductors

2PA1015BL-T/R by NXP Semiconductors is a PNP small signal BJT ideal for switching applications. It features a max VCEsat of 0.3V, hFE of 350, and operates up to 150 °C. With a cylindrical package and through-hole terminals, it ensures reliable performance in compact designs.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 4,262 parts In-Stock

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4,262

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Digiode

USA . 3,511 parts In-Stock

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3,511

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Anansix

USA . 237 parts In-Stock

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237

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Native Components

USA . 548 parts In-Stock

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$7.775

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548

$7.775

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Northwest PG Solutions

USA . 172 parts In-Stock

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$8.553

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$7.698

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172

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$7.698

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One Stop Electronics

USA . 1,223 parts In-Stock

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$46.050

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$46.050

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UNI Independent Distributors

Spain . 3,686 parts In-Stock

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3,686

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Corphita

USA . 3,061 parts In-Stock

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3,061

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Overview

Elevate your electronic designs with the 2PA1015BL-T/R from NXP Semiconductors, a trusted leader in innovation and quality. This PNP small signal transistor offers exceptional switching capabilities, robust performance, and durability under high temperatures. Ideal for diverse applications, its reliable operation ensures smooth functionality in everything from consumer electronics to industrial systems. Choose NXP for proven excellence and experience enhanced efficiency and reliability in your projects!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection against environmental factors, making the product reliable for various applications.

Polarity or Channel Type: PNP

PNP transistors are ideal for high-side switching applications, providing flexibility in circuit design.

Configuration: SINGLE

Single configuration allows for easy integration into circuits without taking up excessive space.

Transistor Application: SWITCHING

Designed for efficient switching, this transistor ensures rapid on/off control in electronic devices.

Maximum VCEsat: 0.3 V

A low saturation voltage reduces power loss and improves overall efficiency in power-sensitive applications.

Package Shape: ROUND

The round package shape is compact and allows for effective heat dissipation, enhancing reliability.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide secure and robust connections, making it suitable for a variety of PCB layouts.

No. of Terminals: 3

Three terminals enable straightforward connections and integration into standard circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical packaging allows for efficient assembly and easier alignment during circuit design.

Minimum DC Current Gain (hFE): 350

A high DC current gain means that the transistor can effectively amplify signals with minimal input current.

Maximum Operating Temperature: 150 °C

High thermal tolerance allows the transistor to operate in demanding environments without failure.

Maximum Collector-Base Capacitance: 7 pF

Low capacitance aids in maintaining signal integrity at higher frequencies.

Maximum Collector-Emitter Voltage: 50 V

A maximum voltage rating of 50 V gives flexibility in applications where higher voltages may be encountered.

Transistor Element Material: SILICON

Silicon as a semiconductor material ensures good performance and reliability in various applications.

Maximum Collector Current (IC): 0.15 A

Support for up to 0.15 A collector current makes it suitable for a wide range of switching applications.

Terminal Position: BOTTOM

Bottom terminal positioning minimizes PCB space usage and facilitates easier soldering.

Nominal Transition Frequency (fT): 80 MHz

An 80 MHz transition frequency allows for high-speed switching, making it suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PA1015BL-T/R attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

350

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PA1015BL-T/R Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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