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2PA1015BL-AMMO

NXP Semiconductors

2PA1015BL-AMMO by NXP Semiconductors

2PA1015BL-AMMO by NXP Semiconductors is a PNP small signal BJT designed for amplifier applications. It features a max VCEsat of 0.3V, hFE of 25, and operates up to 150 °C. Its cylindrical package with through-hole terminals ensures easy integration in electronic circuits.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,747 parts In-Stock

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Anansix

USA . 2,546 parts In-Stock

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Vyrian

USA . 116 parts In-Stock

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Native Components

USA . 73 parts In-Stock

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$1.966

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Northwest PG Solutions

USA . 1,085 parts In-Stock

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$2.163

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One Stop Electronics

USA . 1,269 parts In-Stock

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$52.050

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UNI Independent Distributors

Spain . 4,221 parts In-Stock

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Corphita

USA . 2,381 parts In-Stock

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Overview

Elevate your electronic designs with the 2PA1015BL-AMMO from NXP Semiconductors, a top-tier choice in small signal transistors. Renowned for their reliability and performance, NXP delivers unmatched quality, ensuring your amplifiers operate seamlessly across various applications. With its robust PNP configuration and exceptional gain characteristics, this transistor enhances signal integrity while offering great thermal stability. Choose NXP for excellence that powers innovation!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material ensures durability and resistance to environmental factors, making it suitable for various applications.

Polarity or Channel Type: PNP

Being a PNP transistor allows for easier integration in circuits that require a positive supply voltage, providing versatility in circuit design.

Configuration: SINGLE

A single configuration simplifies design and layout, making it ideal for basic amplifier applications and minimizing space requirements.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this transistor is optimized for linear applications, ensuring better performance in audio and signal processing.

Maximum VCEsat: 0.3 V

A low collector-emitter saturation voltage results in higher efficiency and reduced power loss, making it suitable for low-voltage applications.

Package Shape: ROUND

The round package shape is beneficial for thermal dissipation and manufacturing, allowing for easy handling and assembly.

Terminal Form: THROUGH-HOLE

Through-hole mounting provides robust mechanical support and is ideal for high reliability in applications subject to vibration or stress.

No. of Terminals: 3

Three terminals are standard for BJTs, offering a straightforward connection for both input and output, which simplifies circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style facilitates uniform thermal distribution, enhancing thermal management in various applications.

Minimum DC Current Gain (hFE): 25

A minimum DC current gain helps ensure sufficient amplification for low-level signals, making it suitable for audio and control applications.

Maximum Operating Temperature: 150 °C

With a high operating temperature, this transistor can be used in demanding environments without the risk of thermal failure.

Maximum Collector-Base Capacitance: 7 pF

Low collector-base capacitance minimizes delay and distortion in high-frequency applications, ensuring better signal integrity.

Maximum Collector-Emitter Voltage: 50 V

A maximum collector-emitter voltage of 50V allows for versatility in applications without the risk of breakdown in moderate voltage environments.

Transistor Element Material: SILICON

Silicon as the elemental material provides excellent electrical properties and thermal stability, making it ideal for a wide range of electronic applications.

Maximum Collector Current (IC): 0.15 A

With a collector current rating of 0.15 A, this transistor can handle decent power levels suitable for various applications.

Terminal Position: BOTTOM

Bottom terminal positioning allows for easy PCB layout and improves soldering, ensuring reliable connections in assembly.

Nominal Transition Frequency (fT): 80 MHz

A high transition frequency makes this transistor suitable for high-frequency applications, improving performance in RF and communication circuits.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2PA1015BL-AMMO attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

7 pF

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

25

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.3 V

Trade Compliance

2PA1015BL-AMMO Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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