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CM300DY-24A

Mitsubishi Electric

CM300DY-24A by Mitsubishi Electric

Mitsubishi Electric's CM300DY-24A is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a Max VCEsat of 3V and can handle up to 300A Collector Current. Ideal for POWER CONTROL applications, this device operates at temperatures up to 150°C.

Median Price

$193.700

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Microchip USA

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Perfect Parts

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Overview

Unleash the power of innovation with the CM300DY-24A by Mitsubishi Electric. As a leader in the industry, Mitsubishi Electric's Insulated Gate Bipolar Transistors (IGBT) are known for their reliability and superior performance. With a maximum collector current of 300 A and a maximum operating temperature of 150°C, this N-channel transistor is perfect for power control applications. The CM300DY-24A boasts a series connected configuration with built-in diodes, offering customers unparalleled efficiency and precision in their operations. Trust Mitsubishi Electric to deliver cutting-edge technology that exceeds expectations and drives success in your projects.

Feature Benefit Bullets

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower on-state voltage drop and higher current-carrying capability compared to P-channel IGBTs, making them a good choice for power control applications.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

This configuration allows for efficient power control and voltage regulation, making the IGBT suitable for applications requiring precise power management.

Maximum VCEsat: 3 V

The low VCEsat value indicates minimal voltage drop across the collector-emitter junction when the IGBT is in the on-state, leading to higher efficiency in power control circuits.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact and space-saving design, making it easy to integrate the IGBT into various electronic systems.

Maximum Power Dissipation (Abs): 1890 W

With a high maximum power dissipation, this IGBT can handle large power levels without overheating, ensuring reliable operation under heavy load conditions.

Maximum Collector-Emitter Voltage: 1200 V

The high maximum collector-emitter voltage rating makes this IGBT suitable for high-voltage applications where reliable voltage regulation is essential.

Maximum Collector Current (IC): 300 A

The high collector current rating allows this IGBT to handle large current flows, making it suitable for power control applications that require high current-carrying capability.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM300DY-24A attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum VCEsat:

3 V

Trade Compliance

CM300DY-24A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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