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CM300DX-34T

Mitsubishi Electric

CM300DX-34T by Mitsubishi Electric

The Mitsubishi Electric CM300DX-34T is a N-CHANNEL IGBT transistor with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.45V and can handle up to 300A collector current. Ideal for motor control applications with a max power dissipation of 1515W.

Median Price

$163.500

Lifecycle Status

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2

In-Stock Inventory

< 1k

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Verical

USA . 5 parts In-Stock

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$163.500

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5

$163.500

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Nova Conductors

Japan . 300 parts In-Stock

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300

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Netroflash

USA . 500 parts In-Stock

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500

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Infinite Electronics LLP (Excess)

. 302 parts In-Stock

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Overview

Mitsubishi Electric T/T-1 Industrial Insulated Gate Bipolar Transistor (IGBT) Modules are equipped with a three-phase converter, inverter, and brake circuit (CIB), simplifying the design for inverter systems. The CIB modules reduce package size by 36% compared to the existing module. The T/T-1 series utilizes a 7th-generation IGBT produced using CSTBT™ and a diode while incorporating a relaxed field of cathode (RFC) structure. The construction eliminates the solder-attached section, increasing the thermal cycle lifetime. Mitsubishi Electric T/T-1 Industrial IGBT Modules improve the reliability of inverters, reduce power loss, and simplify the assembly process.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, ensuring durability and reliability.

Polarity or Channel Type: N-CHANNEL

Allows for efficient control of current flow in the motor control application.

Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

Offers built-in diode and thermistor for added functionality and protection, making it versatile for various applications.

Transistor Application: MOTOR CONTROL

Specifically designed for motor control applications, ensuring optimal performance and efficiency.

Maximum Rise Time (tr): 200 ns

Fast rise time helps in quick switching of the transistor, improving overall performance.

Maximum VCEsat: 2.45 V

Low VCEsat value leads to lower power dissipation and higher efficiency in operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy mounting and handling during installation.

No. of Elements: 2

Having 2 elements provides redundancy and increases reliability of the transistor.

Maximum Fall Time (tf): 600 ns

Fast fall time ensures quick turn-off of the transistor, reducing switching losses.

No. of Terminals: 11

Having 11 terminals allows for versatile connectivity options in different circuit configurations.

Maximum Power Dissipation (Abs): 1515 W

High power dissipation rating allows for handling heavy loads and prolonged operation without overheating.

Package Style (Meter): FLANGE MOUNT

Flange mount package style provides easy and secure mounting in various industrial applications.

Maximum Operating Temperature: 150 °C

High maximum operating temperature allows for reliable operation in harsh environmental conditions.

Maximum Collector-Emitter Voltage: 1700 V

High voltage rating ensures safety and reliability in high voltage applications.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in switching applications.

Maximum Turn On Time (ton): 1000 ns

Fast turn-on time ensures quick response and efficient operation of the transistor.

Maximum Gate-Emitter Voltage: 20 V

Safe operating gate-emitter voltage rating ensures protection against overvoltage conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold environments without performance degradation.

Maximum Collector Current (IC): 300 A

High collector current rating enables handling of high current loads in motor control applications.

Maximum Gate-Emitter Threshold Voltage: 6.6 V

Low gate-emitter threshold voltage ensures efficient control and operation of the transistor.

Maximum Turn Off Time (toff): 1400 ns

Fast turn-off time reduces switching losses and enhances overall efficiency.

Terminal Finish: Tin (Sn)

Tin finish provides good conductivity and corrosion resistance for reliable terminal connections.

Terminal Position: UPPER

Upper terminal position allows for convenient and secure connection in various circuit layouts.

Case Connection: ISOLATED

Isolated case connection ensures safe operation and protection against short circuits.

Reference Standard: UL RECOGNIZED

UL recognized reference standard guarantees the quality and safety compliance of the product.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM300DX-34T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Fall Time (tf):

600 ns

Maximum Gate-Emitter Threshold Voltage:

6.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X11

JESD-609 Code:

e3

No. of Elements:

2

No. of Terminals:

11

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Maximum Rise Time (tr):

200 ns

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

MOTOR CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1400 ns

Maximum Turn On Time (ton):

1000 ns

Maximum VCEsat:

2.45 V

Trade Compliance

CM300DX-34T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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