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CM1000DX-24T

Mitsubishi Electric

CM1000DX-24T by Mitsubishi Electric

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 5355 W; Maximum Collector Current (IC): 1000 A; Package Body Material: PLASTIC/EPOXY;

Median Price

$289.850

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 8 parts In-Stock

1+ parts

$289.850

100+ parts

$259.330

1k+ parts

-

10k+ parts

-

8

$289.850

$259.330

-

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 7 parts In-Stock

1+ parts

$480.937

100+ parts

-

1k+ parts

-

10k+ parts

-

7

$480.937

-

-

-

Overview

Mitsubishi Electric T/T-1 Industrial Insulated Gate Bipolar Transistor (IGBT) Modules are equipped with a three-phase converter, inverter, and brake circuit (CIB), simplifying the design for inverter systems. The CIB modules reduce package size by 36% compared to the existing module. The T/T-1 series utilizes a 7th-generation IGBT produced using CSTBT™ and a diode while incorporating a relaxed field of cathode (RFC) structure. The construction eliminates the solder-attached section, increasing the thermal cycle lifetime. Mitsubishi Electric T/T-1 Industrial IGBT Modules improve the reliability of inverters, reduce power loss, and simplify the assembly process.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) CM1000DX-24T attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Mitsubishi Electric

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Fall Time (tf):

400 ns

Maximum Gate-Emitter Threshold Voltage:

6.6 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-PUFM-X11

No. of Elements:

2

No. of Terminals:

11

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

UL RECOGNIZED

Maximum Rise Time (tr):

400 ns

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

1700 ns

Maximum Turn On Time (ton):

1200 ns

Maximum VCEsat:

1.95 V

Trade Compliance

CM1000DX-24T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Mitsubishi Electric

We, the Mitsubishi Electric Group, will contribute to the realization of a vibrant and sustainable society through continuous technological innovation and ceaseless creativity, as a leader in the manufacture and sales of electric and electronic equipment used in Energy and Electric Systems, Industrial Automation, Information and Communication Systems, Electronic Devices, and Home Appliances.

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