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APT35GP120JDQ2

Microsemi

APT35GP120JDQ2 by Microsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 284 W; Maximum Collector Current (IC): 64 A; Terminal Form: UNSPECIFIED;

Median Price

$41.035

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 20 parts In-Stock

1+ parts

$43.390

100+ parts

$35.237

1k+ parts

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10k+ parts

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20

$43.390

$35.237

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Master Electronics

USA . 46 parts In-Stock

1+ parts

-

100+ parts

$38.680

1k+ parts

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10k+ parts

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46

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$38.680

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Connector Distribution Corp

USA . 8 parts In-Stock

1+ parts

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100+ parts

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8

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Right Parts Inc.

USA . 8 parts In-Stock

1+ parts

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8

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip USA

USA . 3,774 parts In-Stock

1+ parts

$88.849

100+ parts

-

1k+ parts

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3,774

$88.849

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QUARKTWIN TECHNOLOGY LTD

USA . 15,299 parts In-Stock

1+ parts

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15,299

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RGB Technical Solutions

Ukraine . 2,858 parts In-Stock

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2,858

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT35GP120JDQ2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

LOW CONDUCTION LOSS

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PUFM-X4

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

220 ns

Nominal Turn On Time (ton):

36 ns

Trade Compliance

APT35GP120JDQ2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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