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APT100GN120B2G

Microsemi

APT100GN120B2G by Microsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 960 W; Maximum Collector Current (IC): 245 A; Terminal Form: THROUGH-HOLE;

Median Price

$29.460

Lifecycle Status

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6

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 11 parts In-Stock

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$9.030

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$9.030

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$9.030

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Farnell

UK . 60 parts In-Stock

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$23.560

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$20.350

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Microchip Technology

USA . 1,708 parts In-Stock

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$29.460

100+ parts

$25.440

1k+ parts

$23.330

10k+ parts

$22.590

1,708

$29.460

$25.440

$23.330

$22.590

DigiKey

USA . 39 parts In-Stock

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$29.460

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$23.913

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39

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$23.913

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Element14

Singapore . 60 parts In-Stock

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$42.130

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$41.290

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Verical

USA . 11 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 31 parts In-Stock

1+ parts

$28.580

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Microchip USA

USA . 8,169 parts In-Stock

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$67.758

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Ledger Components

France . 6,740 parts In-Stock

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LMD Electronica

Estonia . 6,323 parts In-Stock

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Montano Global Distributors

Canada . 4,962 parts In-Stock

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NIA Electronics

USA . 4,340 parts In-Stock

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LOOK Integrated Logistics

Peru . 2,866 parts In-Stock

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Perfect Parts

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) APT100GN120B2G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Microsemi

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

30 V

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN SILVER COPPER

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

935 ns

Nominal Turn On Time (ton):

100 ns

Trade Compliance

APT100GN120B2G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Microsemi

Microsemi Corporation, a wholly owned subsidiary of Microchip Technology Inc. (Nasdaq: MCHP), offers a comprehensive portfolio of semiconductor and system solutions for communications, defense & security, aerospace and industrial markets. Products include high-performance and radiation-hardened analog mixed-signal integrated circuits, FPGAs, SoCs and ASICs; power management products; timing and synchronization devices and precise time solutions, setting the world's standard for time; voice processing devices; RF solutions; discrete components; enterprise storage and communication solutions, security technologies and scalable anti-tamper products; Ethernet solutions; Power-over-Ethernet ICs and midspans; as well as custom design capabilities and services. Microsemi is headquartered in Aliso Viejo, California.

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