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MT25QL256ABA1EW9-0SIT

Micron Technology

MT25QL256ABA1EW9-0SIT by Micron Technology

Micron Technology's MT25QL256ABA1EW9-0SIT is a 256Mbit flash memory with synchronous operation at 133MHz. It has a small outline package, operates in industrial temperature range (-40 to 85 °C), and uses serial interface. Ideal for applications requiring high-speed data storage in compact devices.

Median Price

$4.500

Lifecycle Status

Suppliers In-Stock

26

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 453 parts In-Stock

1+ parts

$3.440

100+ parts

$3.170

1k+ parts

$3.170

10k+ parts

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453

$3.440

$3.170

$3.170

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Farnell

UK . 2,086 parts In-Stock

1+ parts

$3.520

100+ parts

$2.660

1k+ parts

$2.520

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-

2,086

$3.520

$2.660

$2.520

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Mouser Electronics

USA . 438 parts In-Stock

1+ parts

$5.480

100+ parts

$4.960

1k+ parts

-

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438

$5.480

$4.960

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Element14

Singapore . 59 parts In-Stock

1+ parts

$10.050

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59

$10.050

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EBV Elektronik

Germany . 42,240 parts In-Stock

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Verical

USA . 12,188 parts In-Stock

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-

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$5.482

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$5.482

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$5.482

12,188

-

$5.482

$5.482

$5.482

Future Electronics

Canada . 1,920 parts In-Stock

1+ parts

-

100+ parts

-

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$2.200

10k+ parts

$2.170

1,920

-

-

$2.200

$2.170

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DF Sales Co.

USA . 76 parts In-Stock

1+ parts

$3.000

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-

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76

$3.000

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DF Sales Co.

USA . 76 parts In-Stock

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$3.000

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-

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76

$3.000

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Digiode

USA . 156 parts In-Stock

1+ parts

$3.980

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-

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156

$3.980

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Nova Conductors

Japan . 500 parts In-Stock

1+ parts

$6.457

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500

$6.457

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Tomark Electronics Ltd

UK . 1,005 parts In-Stock

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$6.820

100+ parts

-

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1,005

$6.820

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Chip Stock

USA . 19,400 parts In-Stock

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19,400

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Cyclops Electronics Ltd

UK . 8,000 parts In-Stock

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8,000

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Sensible Micro Corp

USA . 3,955 parts In-Stock

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3,955

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Vyrian

USA . 3,757 parts In-Stock

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3,757

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ComSIT Distribution GmbH

Germany . 1,878 parts In-Stock

1+ parts

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1,878

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Dark Horse Electronics

USA . 1,242 parts In-Stock

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1,242

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Next Level Components, LLC

USA . 1,108 parts In-Stock

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1,108

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BCID Electronics Ltd.

Israel . 882 parts In-Stock

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882

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Semi Source

USA . 420 parts In-Stock

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420

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Bristol Electronics

USA . 122 parts In-Stock

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122

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Classic Components Corporation

USA . 40 parts In-Stock

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40

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Rebound Electronics

UK . 38 parts In-Stock

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38

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Touchstone Systems

USA . 2 parts In-Stock

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2

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NexGen Digital

USA . 1 parts In-Stock

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1

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 16,755 parts In-Stock

1+ parts

$2.990

100+ parts

$2.915

1k+ parts

$2.900

10k+ parts

-

16,755

$2.990

$2.915

$2.900

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Corphita

USA . 1,669 parts In-Stock

1+ parts

$3.771

100+ parts

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1,669

$3.771

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Aztec Data Supply Inc.

USA . 16,871 parts In-Stock

1+ parts

$4.030

100+ parts

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16,871

$4.030

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Continental Prestige Electronics

USA . 4,288 parts In-Stock

1+ parts

$5.320

100+ parts

$3.700

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4,288

$5.320

$3.700

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Advanced Electronics

New Zealand . 700 parts In-Stock

1+ parts

$5.525

100+ parts

$5.249

1k+ parts

$5.249

10k+ parts

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700

$5.525

$5.249

$5.249

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Corohmni

South Africa . 317 parts In-Stock

1+ parts

$5.652

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317

$5.652

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Perfect Parts

USA . 26,835 parts In-Stock

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26,835

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Kepictronics

USA . 20,000 parts In-Stock

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RC Electronics

USA . 6,673 parts In-Stock

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6,673

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S.R.D Solutions

India . 6,000 parts In-Stock

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6,000

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A-Z Elektronik GmbH

Germany . 4,947 parts In-Stock

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4,947

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Lucentia Tech

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

$24.593

1k+ parts

$24.593

10k+ parts

$24.593

4,000

-

$24.593

$24.593

$24.593

Robosynatics

Brazil . 3,000 parts In-Stock

1+ parts

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3,000

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Argo Parts USA

USA . 1,898 parts In-Stock

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1,898

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GreenTree Electronics

Israel . 1,440 parts In-Stock

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1,440

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Speed Components Ltd (Excess)

Israel . 4 parts In-Stock

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4

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Overview

Experience the cutting-edge technology of Micron Technology with the MT25QL256ABA1EW9-0SIT Flash Memory. This high-quality product offers a wide range of applications in various industries, providing fast and reliable data storage solutions. With its small outline and very thin profile package style, this flash memory is ideal for industrial use where space is limited. Trust in Micron Technology's expertise to bring you top-notch performance and durability. Upgrade your systems today with the MT25QL256ABA1EW9-0SIT and enjoy the benefits of seamless operation and exceptional quality.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable devices.

Operating Mode: SYNCHRONOUS

Synchronous operation allows for faster data transfer and improved overall performance.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even under demanding conditions.

Memory Density: 268435456 bit

With a high memory density, this flash memory product can store a large amount of data efficiently.

Technical Specifications

Flash Memory MT25QL256ABA1EW9-0SIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

R-PDSO-N8

JESD-609 Code:

e4

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

268435456 words

No. of Words Code:

256M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

256MX1

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3

Maximum Seated Height:

.8 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

NO LEAD

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

6 mm

Trade Compliance

MT25QL256ABA1EW9-0SIT Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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