Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
Featured manufacturers
MT41J128M16HA-15E:DTR by Micron Technology is a DDR3 DRAM with 128MX16 organization, operating at 1.5V. It features synchronous operation, self-refresh capability, and multi-bank page burst access mode. Ideal for applications requiring high memory density and fast data processing in devices like computers and servers.
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Vyrian
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AZTECH Wire
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QUARKTWIN TECHNOLOGY LTD
Microchip USA
Corphita
Bastille Electronics
This material ensures durability and reliability for long-term use.
Easily integrates into a variety of electronic devices for seamless installation.
Provides a compact and space-saving design for efficient use of PCB real estate.
Enhances data transmission speed and accuracy for improved performance.
Helps in maintaining data integrity and reliability during power interruptions.
Works efficiently within standard voltage thresholds for optimal power consumption.
Offers versatile connectivity options and compatibility with different systems.
Facilitates high-density mounting for increased memory capacity in a compact form factor.
Ensures stable operation even in high-temperature environments.
Provides a balanced configuration for handling large data transfer rates effectively.
Can function in a wide range of temperature conditions for versatility.
Enhances connectivity and conductivity for reliable data transmission.
Simplifies PCB layout and component placement for easy integration.
Allows for low-profile installations in compact devices.
Fits well within standard PCB widths for seamless integration.
Operates efficiently at low voltages for reduced power consumption.
Adapts well to standard PCB lengths for easy installation.
Supports fast and efficient memory access for improved system performance.
Utilizes advanced technology for improved speed and energy efficiency.
Provides a secure and reliable connection for stable data transfer.
Offers a large storage capacity for handling extensive data processing tasks.
Supports fast data transfer rates for enhanced system performance.
Enables high-density mounting for increased memory capacity.
Indicates a high memory capacity suitable for demanding applications.
Safely operates within specified voltage limits for optimal performance.
Provides high-density storage capacity for handling large volumes of data efficiently.
Utilizes DDR3 technology for fast and reliable memory access.
DRAM MT41J128M16HA-15E:DTR attributes and parameters. Explore more DRAM devices from Micron Technology
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MT41J128M16HA-15E:DTR Memory ICs trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8542.32.00.36
SB
8542.32.00.23
PCN Packaging - Standard Pkg Label Chg 20/Feb/2019
Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.
President, CEO
Sanjay Mehrotra
Executive VP, CFO
Mark J. Murphy
Executive VP, CBO
Sumit Sadana
Fab 4
Fabrication
Fab Initiation
1994
USA
Boise
Wafer Capacity
8,750
Fab 6
1997
Manassas
23,000
2006
28,000
Fab 11
2007
Taiwan
Taoyuan
34,000
Fab 16 A1
Taichung
50,000
Fab 16 A3
2021
3,000
Fab 15
2002
Japan
Hiroshima
98,000
2004
New Hiroshima DRAM Fab
2017
11,750
Fab 10W
2016
Singapore
20,000
Fab 10X
55,000
2019
18,000
Fab 10A
Fab 10N
2014
47,000
2000
32,000
2012
6,000
Fab 16 A2
2015
43,000
New Clay Fab Phase 1
2027
Clay
New Boise Fab 1
2025
Fab 16 A5
2028
Expansion Fab
2020
LM7805CT
Integrated Circuit Technology
Other Regulators; No. of Terminals: 3; Maximum Input Voltage Absolute: 35 V; Maximum Voltage Tolerance: 5 %; Terminal Position: SINGLE; Operating Temperature (TJ-Min): 0 Cel;
2N2222A
Baneasa S A
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Qualification: Not Qualified;
1N4148WS
Meritek Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Panjit International
BAV99
Panasonic
MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
BSS123,215
Nexperia
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; No. of Terminals: 3; Maximum Time At Peak Reflow Temperature (s): 30;
E8WSDC12-32.768KTR
Ecliptek
PARALLEL - FUNDAMENTAL; Mounting Feature: SURFACE MOUNT; Frequency Tolerance: 20 ppm; Aging: 3 PPM/YEAR; Load Capacitance: 12.5 pF; Nominal Operating Frequency: .032768 MHz;
1N4148
Rfe International
RECTIFIER DIODE; Surface Mount: NO; No. of Elements: 1; Maximum Repetitive Peak Reverse Voltage: 100 V; Maximum Forward Voltage (VF): 1 V; Config: SINGLE;
Gulf Semiconductor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
NXP Semiconductors
NXP Semiconductors' BSS123,215 is a N-CHANNEL FET for SWITCHING applications. Features include 100V DS Breakdown Voltage, 0.17A Drain Current, and 6 ohm On Resistance. With GULL WING terminals and ENHANCEMENT MODE operation, it's ideal for small outline packages in various electronic devices.
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
Formosa Microsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
Synsemi
2N7002
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Terminal Form: GULL WING; Qualification: Not Qualified;
Rectron
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Maximum Operating Temperature: 150 Cel; Terminal Form: GULL WING;
LL4148
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Package Shape: ROUND;
Weitron Technology
RECTIFIER DIODE; Surface Mount: NO; Maximum Reverse Recovery Time: .004 us; Config: SINGLE; Maximum Output Current: .15 A; Terminal Finish: Tin/Lead (Sn/Pb);
OHN3020U
Optek Technology
MAGNETIC FIELD SENSOR,HALL EFFECT; Mounting Feature: THROUGH HOLE MOUNT; No. of Terminals: 3; Output Type: ANALOG CURRENT; Package Shape or Style: RECTANGULAR; Output Range: 25mA;
CC0603KRX7R9BB103
Yageo
Yageo CC0603KRX7R9BB103 is a 0603 SMT ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 50V. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring stable capacitance across temperatures.
MT48LC2M32B2P-7IT:G
Micron Technology
Micron Technology's MT48LC2M32B2P-7IT:G is a 2MX32 Synchronous DRAM with 67108864 bit memory density. It operates at 143 MHz clock frequency, suitable for industrial applications requiring fast data access and common I/O type. With a compact size of 22.22mm x 10.16mm, it offers high performance with low standby current consumption.
MT48LC4M32B2B5-6AAAT:L
Micron Technology's MT48LC4M32B2B5-6AAAT:L is a 4MX32 Synchronous DRAM with 32-bit memory width. Operating at 3.3V, it offers a max access time of 5.4ns and self-refresh capability. Ideal for industrial applications requiring high-speed memory performance in a compact GRID ARRAY package style.
MT48LC16M16A2B4-6A:G
MT48LC16M16A2B4-6A:G by Micron Technology is a 16MX16 DRAM with 3.3V supply, operating at 167MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for commercial applications requiring fast access times and high memory density in a compact grid array package.
MT53E1G32D2FW-046AUT:B
Micron Technology's MT53E1G32D2FW-046AUT:B is a LPDDR4 DRAM with 1GX32 organization, operating at 2133 MHz. It features a thin profile grid array package, operates at temperatures from -40 to 125 °C, and is suitable for applications requiring high-speed synchronous memory.
MT46V16M16P-5BIT:MTR
Micron Technology's MT46V16M16P-5BIT:MTR is a DDR1 DRAM with 16MX16 organization, operating at 2.6V. It features synchronous operation, self-refresh capability, and a memory density of 268MB. Ideal for industrial applications requiring fast access times and reliable performance in a compact form factor.
IS42S16320F-7TLI
Integrated Silicon Solution
IS42S16320F-7TLI by Integrated Silicon Solution is a 32MX16 Synchronous DRAM with 3.3V supply, operating at 143MHz. It features self-refresh mode and common I/O type, suitable for industrial applications requiring fast access times and high memory density.
EDB4432BBBJ-1DAAT-F-D
Micron Technology's EDB4432BBBJ-1DAAT-F-D is a LPDDR2 DRAM with 128MX32 organization, operating at 1.2V. It features synchronous mode, self-refresh capability, and single bank page burst access. Suitable for applications requiring high memory density and low power consumption in compact devices.
IS42S16800F-6BLI
IS42S16800F-6BLI by Integrated Silicon Solution is an 8MX16 Synchronous DRAM with 166 MHz clock frequency, operating at 3.3V. It features a thin profile grid array package and is ideal for industrial applications requiring high memory density and fast access times.
D2164A-20
Intel
Intel's D2164A-20 is a 64KX1 PAGE MODE DRAM with 65536 bit memory density. Operating at 5V, it offers 128 refresh cycles and has a max access time of 200ns. Ideal for commercial applications requiring high-speed memory solutions.
IS42S32800J-7TL
IS42S32800J-7TL by Integrated Silicon Solution is an 8MX32 Synchronous DRAM with 3.3V supply voltage, operating at 143MHz clock frequency. Ideal for commercial applications requiring fast access time of 5.4ns and a memory density of 268MB.
S70KS1282GABHI020
Cypress Semiconductor
HYPERRAM; No. of Terminals: 24; Package Code: VBGA; Package Shape: RECTANGULAR; Memory Width: 8; Minimum Operating Temperature: -40 Cel;
MT46H128M32L2MC-5WT:B
Micron Technology's MT46H128M32L2MC-5WT:B is a DDR1 DRAM with 128MX32 organization, operating at 200 MHz. It features synchronous mode, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in devices with limited space and power constraints.
K4S561632E-UC75
Samsung
Samsung's K4S561632E-UC75 is a 16MX16 DRAM with 3.3V supply, operating at 133MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in commercial temperature environments.
MT48LC8M16A2TG-75IT:GTR
Micron Technology's MT48LC8M16A2TG-75IT:GTR is a 3.3V, 8MX16 Synchronous DRAM with 8388608 words and 134217728 bit memory density. Operating in industrial temperature range, it features self-refresh capability and offers fast access time of 5.4 ns. Ideal for applications requiring high-speed data processing and reliable memory performance.
AS4C512M16D3LA-10BCN
Alliance Memory
Alliance Memory's AS4C512M16D3LA-10BCN is a 512MX16 DDR DRAM MODULE with 1.35V supply, operating at synchronous mode with self-refresh capability. Ideal for applications requiring high memory density and fast access speeds in a compact GRID ARRAY package.
IS43TR16128DL-107MBL
IS43TR16128DL-107MBL by Integrated Silicon Solution is a DDR3L DRAM with 128MX16 organization, operating at 934.58 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in compact electronic devices.
K4T1G164QF-BCE6
Samsung's K4T1G164QF-BCE6 is a 64MX16 DDR2 DRAM with 333 MHz clock frequency. Featuring 67108864 words, it has a memory density of 1073741824 bit and operates at 1.8V. Ideal for applications requiring high-speed data processing and storage in electronic devices.
M393B2G70BH0-YH9
Samsung's M393B2G70BH0-YH9 DRAM features 240 terminals, 1.35V supply voltage, and a max clock frequency of 667MHz. Ideal for high-performance computing applications requiring fast memory access and data processing capabilities.
HY57V281620HCLT-HI
Sk Hynix
SK Hynix's HY57V281620HCLT-HI is an 8MX16 DRAM with 133 MHz clock frequency, operating at 3.3V. Ideal for industrial applications, it offers a memory density of 134217728 bits and features synchronous operation with self-refresh capability.
IS42S81600F-7TLI-TR
IS42S81600F-7TLI-TR by Integrated Silicon Solution is a 16MX8 Synchronous DRAM with 3.3V supply, 143 MHz clock frequency, and -40 to 85°C operating temperature range. Ideal for industrial applications requiring high memory density and fast access times in a small outline package.
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MT41K256M16TW-107AIT:P
Micron Technology's MT41K256M16TW-107AIT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a low supply voltage of 1.35V and is suitable for industrial applications requiring high memory density and fast data access speeds. The package style is grid array, thin profile, fine pitch with common I/O type and self-refresh capability.
MT41K256M16TW-107IT:P
Micron Technology's MT41K256M16TW-107IT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing speeds.
MT41K256M16TW-107XIT:P
Micron Technology's MT41K256M16TW-107XIT:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Ideal for applications requiring high memory density and fast data processing in a grid array package style.
MT41K256M16TW-107:P/TR
Micron Technology's MT41K256M16TW-107:P/TR is a DDR3L DRAM with 256MX16 organization, operating at 934.5 MHz clock frequency. It features synchronous operation, self-refresh capability, and common I/O type. Ideal for applications requiring high-speed memory access in thin-profile devices.
MT41K256M16TW-107:P
Micron Technology's MT41K256M16TW-107:P is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous operation, self-refresh capability, and a memory width of 16 bits. Ideal for applications requiring high-speed data processing in devices like computers and servers.
MT41K256M16TW-107IT:PTR
MT41K256M16TW-107IT:PTR by Micron Technology is a 256MX16 DDR3L DRAM with a memory density of 4Gb. It operates at a nominal voltage of 1.35V and has an access time of 20ns. This memory module is suitable for applications requiring high-speed synchronous operation and low power consumption.
MT41K256M16TW-107AAT:P
Micron Technology's MT41K256M16TW-107AAT:P is a DDR3L DRAM with 256MX16 organization, operating at 934.57 MHz. It features a thin profile grid array package suitable for industrial applications requiring high memory density and common I/O type. With self-refresh capability and AEC-Q100 screening level, it offers reliable performance in harsh environments.
MT41K128M16JT-125IT:KTR
Micron Technology's MT41K128M16JT-125IT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Suitable for applications requiring high memory density and multi-bank page burst access mode.
MT41K128M16JT-125IT:K
MT41K128M16JT-125IT:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a max supply voltage of 1.45V and offers a memory density of 2147483648 bits. Ideal for industrial applications requiring high-speed synchronous memory with common I/O type and self-refresh capabilities.
MT41K256M16TW-107AAT:PTR
MT41K256M16TW-107AAT:PTR by Micron Technology is a DDR3L DRAM with 256MX16 organization, operating at a max clock frequency of 934.57 MHz. It is commonly used in automotive applications due to its AEC-Q100 screening level and wide temperature range (-40°C to 105°C).
MT41K128M16JT-125AIT:KTR
Micron Technology's MT41K128M16JT-125AIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates at temperatures ranging from -40 to 85 °C. Ideal for applications requiring high-speed synchronous memory with common I/O type.
MT41K128M16JT-125XIT:K
Micron Technology's MT41K128M16JT-125XIT:K is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and industrial temperature grade. Ideal for applications requiring high memory density and multi-bank page burst access mode in thin profile packages.
MT41K128M16JT-125:K
MT41K128M16JT-125:K by Micron Technology is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and consumes 195 mA max supply current. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125AIT:K
Micron Technology's MT41K128M16JT-125AIT:K is a DDR3L DRAM with 128MX16 organization, operating at 800 MHz. It features a thin profile grid array package and operates in industrial temperature range. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K128M16JT-125XIT:KTR
Micron Technology's MT41K128M16JT-125XIT:KTR is a DDR3L DRAM with 128MX16 organization, operating at up to 800 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices such as servers, PCs, and networking equipment.
MT41K128M16JT-125:KTR
Micron Technology's MT41K128M16JT-125:KTR is a DDR3L DRAM with 128MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. This thin-profile package with grid array style is suitable for applications requiring high memory density and fast data processing.
MT41K256M16TW-107AUT:P
DDR3L DRAM; Temperature Grade: AUTOMOTIVE; No. of Terminals: 96; Package Code: TFBGA; Refresh Cycles: 8192; Package Shape: RECTANGULAR;
MT41K256M16HA-125IT:E
Micron Technology's MT41K256M16HA-125IT:E is a DDR3L DRAM with 256MX16 organization, operating at 800 MHz. It features a low supply voltage of 1.35V and offers 4294967296 bits memory density. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability.
MT41K256M16HA-125IT:ETR
Micron Technology's MT41K256M16HA-125IT:ETR is a DDR3L DRAM with 256MX16 organization, operating at 1.35V. It features synchronous mode, self-refresh capability, and multi-bank page burst access. Suitable for applications requiring high memory density and fast data processing in compact devices.
MT41K128M16JT-107:K
Micron Technology's MT41K128M16JT-107:K is a DDR3L DRAM with 128MX16 organization, operating at 933 MHz. It features synchronous operation, self-refresh capability, and common I/O type. Suitable for applications requiring high-speed memory access in devices like smartphones, tablets, and networking equipment.
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