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MT25QL128ABA1ESE-MSIT

Micron Technology

MT25QL128ABA1ESE-MSIT by Micron Technology

Micron Technology's MT25QL128ABA1ESE-MSIT is a 16MX8 flash memory with 133 MHz clock frequency. Operating at 3.3V, it offers 16777216 words of memory density for industrial applications. With a small outline package and synchronous mode, it is ideal for high-speed data storage needs.

Median Price

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Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip Stock

USA . 12,900 parts In-Stock

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Vyrian

USA . 2,912 parts In-Stock

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Digiode

USA . 1,429 parts In-Stock

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Cyclops Electronics Ltd

UK . 771 parts In-Stock

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BCID Electronics Ltd.

Israel . 30 parts In-Stock

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LWI Electronics Inc

India . 28 parts In-Stock

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Nova Conductors

Japan . 18 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 288 parts In-Stock

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$2.767

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Aztec Data Supply Inc.

USA . 1,119 parts In-Stock

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$2.930

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AZTECH Wire

Italy . 699 parts In-Stock

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$12.043

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Ampacity Inc.

Singapore . 1,203 parts In-Stock

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$22.000

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Continental Prestige Electronics

USA . 6,488 parts In-Stock

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Argo Parts USA

USA . 4,064 parts In-Stock

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Corphita

USA . 2,375 parts In-Stock

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Kepictronics

USA . 1,820 parts In-Stock

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Benley Electronics

USA . 1,800 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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RC Electronics

USA . 1,000 parts In-Stock

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Microchip USA

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Overview

Unleash the power of Micron Technology's MT25QL128ABA1ESE-MSIT Flash Memory, a game-changer in data storage solutions. With a focus on quality and innovation, Micron guarantees top-notch performance for a wide range of applications. This product offers customers unparalleled value, benefits, and advantages, making it a must-have for those seeking reliable and efficient memory solutions. Upgrade your devices with Micron Technology and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a durable and lightweight body material, making the product ideal for portable applications.

Operating Mode: SYNCHRONOUS

Enhances data transfer efficiency by coordinating data transfers with a clock signal.

No. of Terminals: 8

Offers a sufficient number of terminals for connecting to other components and systems.

Maximum Operating Temperature: 85 °C

Ensures reliable operation in a wide range of temperature conditions.

Memory Width: 8

Provides a wide memory width for storing and retrieving data efficiently.

Technology: CMOS

Utilizes CMOS technology for low power consumption and high speed operation.

Memory Density: 134217728 bit

Offers a high memory density for storing large amounts of data.

Technical Specifications

Flash Memory MT25QL128ABA1ESE-MSIT attributes and parameters. Explore more Flash Memory devices from Micron Technology

Specs

Maximum Clock Frequency (fCLK):

133 MHz

JESD-30 Code:

S-PDSO-G8

Length:

5.285 mm

Memory Density:

134217728 bit

Memory IC Type:

Memory Width:

8

No. of Functions:

1

No. of Terminals:

8

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Programming Voltage (V):

3.3

Maximum Seated Height:

2.16 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

2.7 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

5.285 mm

Trade Compliance

MT25QL128ABA1ESE-MSIT Memory ICs trade compliance attributes, and parameters.

ECCN

3A991.B.1.A

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Micron Technology

Micron Technology, Inc. is a leading provider of cutting-edge semiconductor solutions and products, based in Boise, Idaho. Founded in 1978, the company manufactures dynamic random-access memory (DRAM), flash memory, USB flash drives and other storage solutions used by a wide range of businesses and consumers around the world. With more than 35,000 employees worldwide and a $20 billion market capitalization as of 2019, Micron has remained at the forefront of technological innovation for over 40 years. The company's products are used in enterprise applications such as networking and data centers; mobile computing devices including smartphones and tablets; personal computers; automotive electronics; embedded systems; gaming consoles; imaging systems; industrial manufacturing processes; medical devices; military systems and more.

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Management team

President, CEO

Sanjay Mehrotra

Executive VP, CFO

Mark J. Murphy

Executive VP, CBO

Sumit Sadana

Manufacturer fab locations 23

Fab name Location Fab Initiation Wafer Capacity

Fab 4

Fabrication

Fab Initiation

1994

USA

Boise

Wafer Capacity

8,750

1994

8,750

Fab 6

Fabrication

Fab Initiation

1997

USA

Manassas

Wafer Capacity

23,000

1997

23,000

Fab 6

Fabrication

Fab Initiation

2006

USA

Manassas

Wafer Capacity

28,000

2006

28,000

Fab 11

Fabrication

Fab Initiation

2007

Taiwan

Taoyuan

Wafer Capacity

34,000

2007

34,000

Fab 16 A1

Fabrication

Fab Initiation

2007

Taiwan

Taichung

Wafer Capacity

50,000

2007

50,000

Fab 16 A3

Fabrication

Fab Initiation

2021

Taiwan

Taichung

Wafer Capacity

3,000

2021

3,000

Fab 15

Fabrication

Fab Initiation

2002

Japan

Hiroshima

Wafer Capacity

98,000

2002

98,000

Fab 11

Fabrication

Fab Initiation

2004

Taiwan

Taoyuan

Wafer Capacity

34,000

2004

34,000

New Hiroshima DRAM Fab

Fabrication

Fab Initiation

-

Japan

Hiroshima

Wafer Capacity

-

Fab 4

Fabrication

Fab Initiation

2017

USA

Boise

Wafer Capacity

11,750

2017

11,750

Fab 10W

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

20,000

2016

20,000

Fab 10X

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

55,000

2016

55,000

Fab 15

Fabrication

Fab Initiation

2019

Japan

Hiroshima

Wafer Capacity

18,000

2019

18,000

Fab 10A

Fabrication

Fab Initiation

2019

Singapore

Singapore

Wafer Capacity

18,000

2019

18,000

Fab 10N

Fabrication

Fab Initiation

2014

Singapore

Singapore

Wafer Capacity

47,000

2014

47,000

Fab 11

Fabrication

Fab Initiation

2000

Taiwan

Taoyuan

Wafer Capacity

32,000

2000

32,000

Fab 4

Fabrication

Fab Initiation

2012

USA

Boise

Wafer Capacity

6,000

2012

6,000

Fab 16 A2

Fabrication

Fab Initiation

2015

Taiwan

Taichung

Wafer Capacity

43,000

2015

43,000

New Clay Fab Phase 1

Fabrication

Fab Initiation

2027

USA

Clay

Wafer Capacity

2027

New Boise Fab 1

Fabrication

Fab Initiation

2025

USA

Boise

Wafer Capacity

2025

Fab 15

Fabrication

Fab Initiation

2021

Japan

Hiroshima

Wafer Capacity

2021

Fab 16 A5

Fabrication

Fab Initiation

2028

Taiwan

Taichung

Wafer Capacity

2028

Expansion Fab

Fabrication

Fab Initiation

2020

USA

Manassas

Wafer Capacity

6,000

2020

6,000

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