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2N5031

Microchip Technology

2N5031 by Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 1200 MHz; Maximum Collector Current (IC): .02 A; Terminal Position: BOTTOM;

Median Price

$14.656

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (In-Stock)

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American Microsemiconductor Inc.

USA . 87 parts In-Stock

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$8.360

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Freelance Electronics

USA . 1 parts In-Stock

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$10.013

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1

$10.013

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DF Sales Co.

USA . 22 parts In-Stock

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$19.300

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DF Sales Co.

USA . 22 parts In-Stock

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$19.300

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Digiode

USA . 2,335 parts In-Stock

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Vyrian

USA . 885 parts In-Stock

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Odi Ramu Company

Canada . 50 parts In-Stock

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ECAB

Sweden . 17 parts In-Stock

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Electronic Expediters

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LittleDiode

UK . 10 parts In-Stock

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MISTER SPROCKETS

USA . 9 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 465 parts In-Stock

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$8.360

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QUARKTWIN TECHNOLOGY LTD

USA . 16,029 parts In-Stock

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XL Components Corporation

Australia . 6,355 parts In-Stock

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Marpe Global Electronics

Taiwan . 5,900 parts In-Stock

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SupplyDigital Components

Austria . 3,531 parts In-Stock

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QualityLine Systems

Poland . 3,506 parts In-Stock

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Authorized Procurement Solutions

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Kulean Microsystems

USA . 2,651 parts In-Stock

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Glotronic Ltd.

UK . 2,500 parts In-Stock

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Problanco Electronics

Mexico . 2,205 parts In-Stock

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Corphita

USA . 2,055 parts In-Stock

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Northwest PG Solutions

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TANS Electronics

Latvia . 1,231 parts In-Stock

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UHIMA Technologies

Türkiye . 787 parts In-Stock

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Native Components

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Assy Fe

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Perfect Parts

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RTC Component Inc.

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Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) 2N5031 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

10 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N5031 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-199-7315, 5961011997315, 5961-01-487-5765, 5961014875765, 5961-01-487-5722, 5961014875722, 5961-01-087-3339, 5961010873339, 5961-01-487-5769, 5961014875769, 5961-14-366-3816, 5961143663816

NIIN

011997315, 014875765, 014875722, 010873339, 014875769, 143663816

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

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