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MWI100-12A8

IXYS Corporation

MWI100-12A8 by IXYS Corporation

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 640 W; Maximum Collector Current (IC): 160 A; Reference Standard: UL RECOGNIZED;

Median Price

$815.271

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 32 parts In-Stock

1+ parts

$586.712

100+ parts

-

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32

$586.712

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NAC Semi

USA . 26 parts In-Stock

1+ parts

$1,043.830

100+ parts

$963.540

1k+ parts

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10k+ parts

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26

$1,043.830

$963.540

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ACDS - Activité Composants Distribution Service

France . 45 parts In-Stock

1+ parts

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45

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Andel Nordic

Denmark . 181 parts In-Stock

1+ parts

$11.169

100+ parts

-

1k+ parts

$10.722

10k+ parts

$10.722

181

$11.169

-

$10.722

$10.722

Microchip USA

USA . 9,319 parts In-Stock

1+ parts

$339.510

100+ parts

-

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9,319

$339.510

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Glotronic Ltd.

UK . 1,965 parts In-Stock

1+ parts

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1,965

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Perfect Parts

USA . 72 parts In-Stock

1+ parts

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72

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GreenTree Electronics

Israel . 50 parts In-Stock

1+ parts

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50

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Authorized Procurement Solutions

USA . 32 parts In-Stock

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32

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MWI100-12A8 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from IXYS Corporation

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X19

JESD-609 Code:

e3

No. of Elements:

6

No. of Terminals:

19

Maximum Operating Temperature:

125 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Reference Standard:

UL RECOGNIZED

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

MATTE TIN OVER NICKEL

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

690 ns

Nominal Turn On Time (ton):

160 ns

Maximum VCEsat:

2.6 V

Trade Compliance

MWI100-12A8 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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