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IRG4PC50F

International Rectifier

IRG4PC50F by International Rectifier

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 200 W; Maximum Collector Current (IC): 70 A; Case Connection: COLLECTOR;

Median Price

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6

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Vyrian

USA . 4,555 parts In-Stock

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Digiode

USA . 799 parts In-Stock

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Prism Electronics

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Fibra_Brandt Electronic GMBH

Germany . 8 parts In-Stock

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J & M Industries LLC

USA . 6 parts In-Stock

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Technoshack Inc.

Canada . 5 parts In-Stock

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Modulus Dynamics

Lithuania . 17,938 parts In-Stock

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$1.118

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$1.073

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

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Perfect Parts

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Cyclops Electronics Ltd (Excess)

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Assy Fe

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IRG4PC50F attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from International Rectifier

Specs

Additional Features:

FAST SPEED

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

Configuration:

Maximum Fall Time (tf):

190 ns

Maximum Gate-Emitter Threshold Voltage:

6 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247AC

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

620 ns

Nominal Turn On Time (ton):

52 ns

Trade Compliance

IRG4PC50F Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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