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S80KS2564GACHV040

Infineon Technologies

S80KS2564GACHV040 by Infineon Technologies

Infineon's S80KS2564GACHV040 is a 16MX16 DRAM with 1.8V supply voltage, operating at up to 200MHz clock frequency. Ideal for applications requiring high-speed synchronous memory with common I/O type and self-refresh capability in a compact grid array package.

Median Price

$8.040

Lifecycle Status

Suppliers In-Stock

15

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 21 parts In-Stock

1+ parts

$5.453

100+ parts

$5.308

1k+ parts

-

10k+ parts

-

21

$5.453

$5.308

-

-

Chip1Stop

Japan . 200 parts In-Stock

1+ parts

$5.750

100+ parts

$5.080

1k+ parts

-

10k+ parts

-

200

$5.750

$5.080

-

-

Newark

USA . 137 parts In-Stock

1+ parts

$8.040

100+ parts

-

1k+ parts

-

10k+ parts

-

137

$8.040

-

-

-

Mouser Electronics

USA . 25 parts In-Stock

1+ parts

$9.550

100+ parts

$8.210

1k+ parts

$7.930

10k+ parts

-

25

$9.550

$8.210

$7.930

-

DigiKey

USA . 5 parts In-Stock

1+ parts

$9.550

100+ parts

$8.201

1k+ parts

$7.725

10k+ parts

$7.529

5

$9.550

$8.201

$7.725

$7.529

Farnell

UK . 117 parts In-Stock

1+ parts

$15.300

100+ parts

$9.180

1k+ parts

-

10k+ parts

-

117

$15.300

$9.180

-

-

Element14

Singapore . 117 parts In-Stock

1+ parts

$21.690

100+ parts

$15.900

1k+ parts

-

10k+ parts

-

117

$21.690

$15.900

-

-

Flip Electronics (Authorized)

USA . 3,120 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,120

-

-

-

-

Rochester

USA . 1,587 parts In-Stock

1+ parts

-

100+ parts

$5.140

1k+ parts

$4.600

10k+ parts

$4.330

1,587

-

$5.140

$4.600

$4.330

Verical

USA . 1,252 parts In-Stock

1+ parts

-

100+ parts

$6.425

1k+ parts

$5.750

10k+ parts

$5.412

1,252

-

$6.425

$5.750

$5.412

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 424 parts In-Stock

1+ parts

$2.964

100+ parts

-

1k+ parts

-

10k+ parts

-

424

$2.964

-

-

-

Nova Conductors

Japan . 650 parts In-Stock

1+ parts

$12.378

100+ parts

-

1k+ parts

-

10k+ parts

-

650

$12.378

-

-

-

Vyrian

USA . 8,435 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

8,435

-

-

-

-

Flip Electronics

USA . 1,300 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,300

-

-

-

-

NAC Semi

USA . 260 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$9.630

10k+ parts

-

260

-

-

$9.630

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 124 parts In-Stock

1+ parts

$2.650

100+ parts

-

1k+ parts

-

10k+ parts

-

124

$2.650

-

-

-

Corphita

USA . 549 parts In-Stock

1+ parts

$2.808

100+ parts

-

1k+ parts

-

10k+ parts

-

549

$2.808

-

-

-

Modulus Dynamics

Lithuania . 6,481 parts In-Stock

1+ parts

$3.673

100+ parts

$3.526

1k+ parts

$3.379

10k+ parts

-

6,481

$3.673

$3.526

$3.379

-

Continental Prestige Electronics

USA . 260 parts In-Stock

1+ parts

$14.210

100+ parts

$11.380

1k+ parts

-

10k+ parts

-

260

$14.210

$11.380

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-

Eastek

USA . 260 parts In-Stock

1+ parts

-

100+ parts

$18.520

1k+ parts

-

10k+ parts

-

260

-

$18.520

-

-

Overview

Unleash the power of cutting-edge technology with the S80KS2564GACHV040 by Infineon Technologies. Crafted with precision and expertise, this DRAM offers unparalleled performance and reliability for a wide range of applications. With a focus on quality and innovation, Infineon Technologies ensures that customers receive nothing but the best. Elevate your projects with this advanced memory solution, designed to deliver exceptional value, speed, and efficiency. Experience the difference with Infineon Technologies and take your work to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the DRAM, making it a reliable choice for long-term use.

Surface Mount: YES

The surface mount feature allows for easy installation and integration into various electronic devices.

Package Shape: SQUARE

The square shape of the package ensures efficient use of space and easy stacking in compact designs.

Operating Mode: SYNCHRONOUS

Synchronous operation enhances the overall performance and speed of the DRAM, making it suitable for high-speed applications.

Self Refresh: YES

The self-refresh capability helps maintain data integrity and reliability without requiring external refresh signals.

Input/Output Type: COMMON

Common input/output type simplifies the interface design and compatibility with other components.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage ensures energy efficiency and compatibility with modern electronic devices.

No. of Terminals: 49

The high number of terminals allows for versatile connections and increased functionality in complex systems.

Package Style (Meter): GRID ARRAY, VERY THIN PROFILE

The grid array style with a thin profile enables space-saving designs and efficient heat dissipation.

Maximum Operating Temperature: 105 °C

The high maximum operating temperature range ensures reliable performance even in harsh environments.

Organization: 16MX16

The organization of 16MX16 offers a large memory capacity for storing and processing a significant amount of data.

Minimum Operating Temperature: -40 °C

The low minimum operating temperature ensures reliable performance even in extreme cold conditions.

Terminal Position: BOTTOM

The bottom terminal position facilitates easy installation and connection in various electronic systems.

Maximum Seated Height: 1 mm

The low seated height allows for compact designs and efficient space utilization in electronic devices.

Maximum Clock Frequency (fCLK): 200 MHz

The high maximum clock frequency supports fast data processing and high-speed performance in demanding applications.

Width: 8 mm

The width dimension ensures compatibility with standard PCB layouts and easy integration into electronic assemblies.

Minimum Supply Voltage (Vsup): 1.7 V

The low minimum supply voltage requirement ensures energy efficiency and compatibility with a wide range of electronic systems.

Length: 8 mm

The length dimension enables space-saving designs and efficient placement in compact electronic devices.

Technology: CMOS

The CMOS technology offers low power consumption, high speed, and reliability, making it a popular choice for DRAM applications.

Terminal Form: BALL

The ball terminal form provides secure connections and easy soldering during installation in electronic assemblies.

Maximum Supply Current: 22 mA

The low maximum supply current requirement ensures energy efficiency and compatibility with various power sources.

No. of Words: 16777216 words

The large number of words provides ample storage capacity for data processing and retrieval in memory-intensive applications.

Memory Width: 16

The 16-bit memory width allows for efficient data transfer and processing, enhancing the overall performance of the DRAM.

Terminal Pitch: 1 mm

The small terminal pitch enables high-density packaging and space-saving designs in electronic systems.

No. of Words Code: 16M

The 16M words code designation indicates a large memory capacity suitable for data-intensive applications.

Moisture Sensitivity Level (MSL): 3

The MSL level of 3 ensures protection against moisture damage, improving the reliability and longevity of the DRAM.

Maximum Supply Voltage (Vsup): 2 V

The high maximum supply voltage tolerance provides flexibility in power source compatibility and stability during operation.

Memory Density: 268435456 bit

The high memory density allows for efficient data storage and processing capabilities in memory-intensive applications.

Memory IC Type: HYPERRAM

The HYPERRAM IC type offers high-speed performance, low power consumption, and compatibility with a wide range of electronic systems.

Maximum Standby Current: 0.00155 Amp

The low standby current consumption ensures energy efficiency and minimal power usage in idle or standby modes.

Maximum Access Time: 35 ns

The fast maximum access time enables quick data retrieval and processing, making the DRAM suitable for high-speed applications.

Technical Specifications

DRAM S80KS2564GACHV040 attributes and parameters. Explore more DRAM devices from Infineon Technologies

Specs

Maximum Access Time:

35 ns

Additional Features:

SELF REFRESH

Maximum Clock Frequency (fCLK):

200 MHz

Input/Output Type:

COMMON

JESD-30 Code:

S-PBGA-B49

Length:

8 mm

Memory Density:

268435456 bit

Memory IC Type:

Memory Width:

16

Moisture Sensitivity Level (MSL):

3

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

49

No. of Words:

16777216 words

No. of Words Code:

16M

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

105 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

16MX16

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

BGA49,7X7,20

Package Shape:

Package Style (Meter):

GRID ARRAY, VERY THIN PROFILE

Maximum Seated Height:

1 mm

Self Refresh:

YES

Maximum Standby Current:

.00155 Amp

Maximum Supply Current:

22 mA

Maximum Supply Voltage (Vsup):

2 V

Minimum Supply Voltage (Vsup):

1.7 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

BALL

Terminal Pitch:

1 mm

Terminal Position:

BOTTOM

Width:

8 mm

Trade Compliance

S80KS2564GACHV040 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.24

SB

8542.32.00.15

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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