Loading...

IKP20N60H3

Infineon Technologies

IKP20N60H3 by Infineon Technologies

IKP20N60H3 by Infineon is an N-CHANNEL IGBT with 600V max collector-emitter voltage and 40A max collector current. It has a turn-off time of 241ns and turn-on time of 31ns, suitable for power control applications. The transistor comes in a rectangular package with through-hole terminals, designed for high temperature environments up to 175°C.

Median Price

$3.412

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 13 parts In-Stock

1+ parts

$3.325

100+ parts

-

1k+ parts

-

10k+ parts

-

13

$3.325

-

-

-

Vyrian

USA . 984 parts In-Stock

1+ parts

$3.500

100+ parts

-

1k+ parts

-

10k+ parts

-

984

$3.500

-

-

-

Bristol Electronics

USA . 100 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

100

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 19,524 parts In-Stock

1+ parts

$0.655

100+ parts

$0.629

1k+ parts

$0.603

10k+ parts

-

19,524

$0.655

$0.629

$0.603

-

Corphita

USA . 932 parts In-Stock

1+ parts

$3.150

100+ parts

-

1k+ parts

-

10k+ parts

-

932

$3.150

-

-

-

Andel Nordic

Denmark . 178 parts In-Stock

1+ parts

$39.360

100+ parts

-

1k+ parts

$27.550

10k+ parts

$27.550

178

$39.360

-

$27.550

$27.550

A-Z Elektronik GmbH

Germany . 11,268 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,268

-

-

-

-

Alle Elektronik GmbH

Germany . 4,012 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,012

-

-

-

-

Kepictronics

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

-

Authorized Procurement Solutions

USA . 500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

500

-

-

-

-

Perfect Parts

USA . 321 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

321

-

-

-

-

Overview

Elevate your power control capabilities with the IKP20N60H3 by Infineon Technologies. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor (IGBT) offers unparalleled quality and performance in a single package with a built-in diode. Ideal for a range of applications, from industrial machinery to renewable energy systems, this N-channel transistor ensures reliable and efficient power management. Experience the value and benefits of Infineon's cutting-edge technology, providing you with the advantage you need to stay ahead in today's competitive market.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation properties, making the IGBT durable and reliable in various environments.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and saves space, making it convenient for power control applications.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and efficiency.

Maximum Collector-Emitter Voltage: 600 V

With a high maximum voltage rating, this IGBT can handle high power loads safely and effectively.

Maximum Collector Current (IC): 40 A

The high collector current rating allows this IGBT to handle heavy loads and provide reliable power control.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKP20N60H3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

241 ns

Nominal Turn On Time (ton):

31 ns

Trade Compliance

IKP20N60H3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 12