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IKB20N60TATMA1

Infineon Technologies

IKB20N60TATMA1 by Infineon Technologies

IKB20N60TATMA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 600V and a max collector current of 40A. It has a nominal turn-off time of 299ns and is designed for power control applications. This surface-mount transistor comes in a small outline package with GULL WING terminals, making it suitable for high-power switching circuits.

Median Price

$1.500

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 200 parts In-Stock

1+ parts

$0.413

100+ parts

$0.413

1k+ parts

$0.413

10k+ parts

-

200

$0.413

$0.413

$0.413

-

Arrow

USA . 1,059 parts In-Stock

1+ parts

$0.507

100+ parts

$0.483

1k+ parts

$0.460

10k+ parts

-

1,059

$0.507

$0.483

$0.460

-

Chip1Stop

Japan . 930 parts In-Stock

1+ parts

$1.360

100+ parts

-

1k+ parts

-

10k+ parts

-

930

$1.360

-

-

-

Element14

Singapore . 1,641 parts In-Stock

1+ parts

$2.359

100+ parts

$1.740

1k+ parts

$1.452

10k+ parts

-

1,641

$2.359

$1.740

$1.452

-

Farnell

UK . 1,641 parts In-Stock

1+ parts

$2.745

100+ parts

$1.682

1k+ parts

$1.417

10k+ parts

-

1,641

$2.745

$1.682

$1.417

-

DigiKey

USA . 4,283 parts In-Stock

1+ parts

$3.360

100+ parts

$1.521

1k+ parts

$1.145

10k+ parts

$1.067

4,283

$3.360

$1.521

$1.145

$1.067

RS (Exports)

UK . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.856

10k+ parts

-

1,000

-

-

$1.856

-

Verical

USA . 777 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$1.500

10k+ parts

$1.337

777

-

-

$1.500

$1.337

Rochester

USA . 777 parts In-Stock

1+ parts

-

100+ parts

$1.450

1k+ parts

$1.200

10k+ parts

$1.070

777

-

$1.450

$1.200

$1.070

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 885 parts In-Stock

1+ parts

$0.871

100+ parts

-

1k+ parts

-

10k+ parts

-

885

$0.871

-

-

-

Nova Conductors

Japan . 48 parts In-Stock

1+ parts

$1.640

100+ parts

-

1k+ parts

-

10k+ parts

-

48

$1.640

-

-

-

Chip Stock

USA . 4,555 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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4,555

-

-

-

-

Vyrian

USA . 1,611 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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1,611

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,801 parts In-Stock

1+ parts

$0.780

100+ parts

-

1k+ parts

-

10k+ parts

-

1,801

$0.780

-

-

-

Corphita

USA . 861 parts In-Stock

1+ parts

$0.825

100+ parts

-

1k+ parts

-

10k+ parts

-

861

$0.825

-

-

-

Argo Parts USA

USA . 2,277 parts In-Stock

1+ parts

$1.640

100+ parts

-

1k+ parts

-

10k+ parts

-

2,277

$1.640

-

-

-

Modulus Dynamics

Lithuania . 18,005 parts In-Stock

1+ parts

$1.742

100+ parts

$1.672

1k+ parts

$1.603

10k+ parts

-

18,005

$1.742

$1.672

$1.603

-

Continental Prestige Electronics

USA . 1,651 parts In-Stock

1+ parts

$2.020

100+ parts

$1.500

1k+ parts

$1.270

10k+ parts

-

1,651

$2.020

$1.500

$1.270

-

Microchip USA

USA . 8,308 parts In-Stock

1+ parts

$12.691

100+ parts

-

1k+ parts

-

10k+ parts

-

8,308

$12.691

-

-

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Perfect Parts

USA . 2,251 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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2,251

-

-

-

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$1.607

1k+ parts

$1.558

10k+ parts

$1.525

2,000

-

$1.607

$1.558

$1.525

Authorized Procurement Solutions

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

-

-

-

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Overview

Enhance your power control applications with the Infineon Technologies IKB20N60TATMA1 Insulated Gate Bipolar Transistor. Manufactured by industry leader Infineon Technologies, this N-CHANNEL transistor offers reliable performance and high quality in a compact package. With a built-in diode and fast turn-on/off times, this transistor provides efficient power control for a variety of electronic devices. Trust Infineon Technologies to deliver superior products that meet your needs and exceed your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a long lifespan for the product.

Polarity or Channel Type: N-CHANNEL

N-channel IGBTs typically have lower conduction losses, making them more energy-efficient.

Configuration: SINGLE WITH BUILT-IN DIODE

Built-in diode allows for easy implementation in circuits and simplifies the overall design.

Transistor Application: POWER CONTROL

Specifically designed for power control applications, ensuring optimal performance in such scenarios.

Surface Mount: YES

Enables easy and secure mounting on PCBs, making it suitable for modern electronics manufacturing.

Maximum Collector-Emitter Voltage: 600 V

Can handle high voltages, making it suitable for applications that require voltage regulation and power conversion.

Maximum Collector Current (IC): 40 A

Capable of handling high currents, allowing for power control in applications that require substantial current flow.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IKB20N60TATMA1 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JEDEC-95 Code:

TO-263AB

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

299 ns

Nominal Turn On Time (ton):

36 ns

Trade Compliance

IKB20N60TATMA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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