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IGW25N120H3

Infineon Technologies

IGW25N120H3 by Infineon Technologies

IGW25N120H3 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 50A max collector current, and 326W max power dissipation. It is used for power control applications due to its single configuration and fast turn-off time of 397ns. The transistor has a flange mount package style and operates up to 175°C temperature.

Median Price

$5.210

Lifecycle Status

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5

In-Stock Inventory

1k+

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Mouser Electronics

USA . 394 parts In-Stock

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$5.210

100+ parts

$3.540

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$3.140

10k+ parts

$2.530

394

$5.210

$3.540

$3.140

$2.530

Distributors (In-Stock)

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Digiode

USA . 693 parts In-Stock

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$4.950

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Vyrian

USA . 275 parts In-Stock

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275

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TME

Poland . 193 parts In-Stock

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$6.530

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$4.670

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Rutronik

Germany . 150 parts In-Stock

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$3.220

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$2.910

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Modulus Dynamics

Lithuania . 1,177 parts In-Stock

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$0.758

100+ parts

$0.728

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$0.697

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1,177

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Corphita

USA . 574 parts In-Stock

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$4.689

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Lixinc

USA . 11,882 parts In-Stock

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Kepictronics

USA . 3,580 parts In-Stock

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Futuretech Components

Singapore . 3,580 parts In-Stock

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Perfect Parts

USA . 2,482 parts In-Stock

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Infinite Electronics LLP (Excess)

. 725 parts In-Stock

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Overview

Infineon High Speed Trench & Fieldstop IGBTs use TrenchStop™ and Fieldstop technology to provide superb switching performance, very low VCEsat, and low EMI. Infineon High Speed Trench & Fieldstop IGBTs are ideal for uninterruptible power supplies applications. The IGW25N120H3 IGBT is recommended in combination with SiC Diode IDH15S120 and is also used for solar inverter applications. The IKW15N120H3, IKW30N60H3, and IKW20N60H3 IGBTs are each part of a high speed DuoPack and come with a very soft, fast recovery anti-parallel diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring the longevity of the product.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage drop and faster switching speeds compared to P-channel, making them more efficient for power control applications.

Configuration: SINGLE

Simplifies circuit design and control, making the product easier to integrate and use.

Transistor Application: POWER CONTROL

Designed specifically for power control applications, ensuring optimal performance and reliability in such scenarios.

Nominal Turn Off Time (toff): 397 ns

The fast turn-off time allows for efficient switching and minimizes power loss during operation.

Maximum Power Dissipation (Abs): 326 W

With a high power dissipation rating, this IGBT can handle heavy loads and high-power applications without overheating.

Maximum Operating Temperature: 175 °C

The high operating temperature rating ensures reliability and stability even under extreme conditions.

Maximum Collector-Emitter Voltage: 1200 V

Suitable for high voltage applications, providing flexibility and versatility in various power control scenarios.

Maximum Gate-Emitter Voltage: 20 V

Provides a safe operating range for the gate-emitter voltage to prevent damage to the IGBT.

Maximum Collector Current (IC): 50 A

Able to handle high currents, making it suitable for power control applications that require high current ratings.

Nominal Turn On Time (ton): 61 ns

The fast turn-on time allows for quick response and precise control in power switching applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) IGW25N120H3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1200 V

Configuration:

Maximum Gate-Emitter Threshold Voltage:

6.5 V

Maximum Gate-Emitter Voltage:

20 V

JEDEC-95 Code:

TO-247

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

397 ns

Nominal Turn On Time (ton):

61 ns

Trade Compliance

IGW25N120H3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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