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MRF7S18125BHR3

Freescale Semiconductor

MRF7S18125BHR3 by Freescale Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: L BAND; Peak Reflow Temperature (C): 260; Maximum Operating Temperature: 225 Cel;

Median Price

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In-Stock Inventory

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Vyrian

USA . 4,750 parts In-Stock

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Anansix

USA . 1,320 parts In-Stock

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Digiode

USA . 908 parts In-Stock

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908

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One Stop Electronics

USA . 1,358 parts In-Stock

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$41.050

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QUARKTWIN TECHNOLOGY LTD

USA . 29,344 parts In-Stock

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Corphita

USA . 2,495 parts In-Stock

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2,495

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UNI Independent Distributors

Spain . 1,284 parts In-Stock

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Microchip USA

USA . 100 parts In-Stock

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100

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Technical Specifications

RF Power Field Effect Transistors (FET) MRF7S18125BHR3 attributes and parameters. Explore more RF Power Field Effect Transistors (FET) devices from Freescale Semiconductor

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

65 V

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

L BAND

JESD-30 Code:

R-CDFM-F2

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

225 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MRF7S18125BHR3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

Manufacturer Highlights

Freescale Semiconductor

On December 7, 2015, NXP completed the merger with Freescale Semiconductor; the merged company continued its operation as NXP Semiconductors N.V.

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