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FF200R06KF3

Eupec & Kg

FF200R06KF3 by Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Maximum Collector-Emitter Voltage: 600 V; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) FF200R06KF3 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

600 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

POWER CONTROL

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

500 ns

Nominal Turn On Time (ton):

400 ns

Trade Compliance

FF200R06KF3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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