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BSM200GA170DN2S

Eupec & Kg

BSM200GA170DN2S by Eupec & Kg

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1750 W; Maximum Collector Current (IC): 200 A; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

< 1k

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 235 parts In-Stock

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235

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Vyrian

USA . 109 parts In-Stock

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109

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ACDS - Activité Composants Distribution Service

France . 80 parts In-Stock

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80

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Fibra_Brandt Electronic GMBH

Germany . 48 parts In-Stock

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48

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Modulus Dynamics

Lithuania . 3,621 parts In-Stock

1+ parts

$1.984

100+ parts

$1.905

1k+ parts

$1.825

10k+ parts

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3,621

$1.984

$1.905

$1.825

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.185

100+ parts

$1.988

1k+ parts

$1.792

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-

500

$2.185

$1.988

$1.792

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Andel Nordic

Denmark . 509 parts In-Stock

1+ parts

$43.070

100+ parts

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$30.147

10k+ parts

$30.147

509

$43.070

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$30.147

$30.147

Native Components

USA . 452 parts In-Stock

1+ parts

$19,676.000

100+ parts

$19,282.480

1k+ parts

$19,085.720

10k+ parts

$18,888.960

452

$19,676.000

$19,282.480

$19,085.720

$18,888.960

Northwest PG Solutions

USA . 1,334 parts In-Stock

1+ parts

$21,643.600

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1,334

$21,643.600

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Glotronic Ltd.

UK . 3,900 parts In-Stock

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3,900

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Corphita

USA . 961 parts In-Stock

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961

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM200GA170DN2S attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X5

No. of Elements:

1

No. of Terminals:

5

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Application:

GENERAL PURPOSE SWITCHING

Transistor Element Material:

SILICON

Maximum VCEsat:

3.9 V

Trade Compliance

BSM200GA170DN2S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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