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BSM100GB170DN2

Eupec & Kg

BSM100GB170DN2 by Eupec & Kg

N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 1000 W; Maximum Collector Current (IC): 100 A; Transistor Element Material: SILICON;

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 850 parts In-Stock

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850

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Vyrian

USA . 228 parts In-Stock

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Distributors (Availability)

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Modulus Dynamics

Lithuania . 12,018 parts In-Stock

1+ parts

$1.798

100+ parts

$1.726

1k+ parts

$1.654

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12,018

$1.798

$1.726

$1.654

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Component Stockers USA

USA . 4,280 parts In-Stock

1+ parts

$66.810

100+ parts

$63.460

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$61.460

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4,280

$66.810

$63.460

$61.460

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Northwest PG Solutions

USA . 1,778 parts In-Stock

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Native Components

USA . 730 parts In-Stock

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730

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Perfect Parts

USA . 119 parts In-Stock

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119

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Corphita

USA . 14 parts In-Stock

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Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) BSM100GB170DN2 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Eupec & Kg

Specs

Case Connection:

ISOLATED

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

1700 V

Maximum Gate-Emitter Voltage:

20 V

JESD-30 Code:

R-XUFM-X7

No. of Elements:

2

No. of Terminals:

7

Maximum Operating Temperature:

150 Cel

Package Body Material:

UNSPECIFIED

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

NO

Terminal Form:

UNSPECIFIED

Terminal Position:

UPPER

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

960 ns

Nominal Turn On Time (ton):

650 ns

Maximum VCEsat:

3.9 V

Trade Compliance

BSM100GB170DN2 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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