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ZXTP2025FTA

Diodes Incorporated

ZXTP2025FTA by Diodes Incorporated

ZXTP2025FTA by Diodes Inc. is a PNP BJT transistor with max 50V VCE, 5A IC, and 190MHz fT. Ideal for switching applications in small outline packages due to its high DC gain of 12 and operating temp up to 150°C.

Median Price

$0.734

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 93,178 parts In-Stock

1+ parts

$1.210

100+ parts

$0.501

1k+ parts

$0.353

10k+ parts

$0.290

93,178

$1.210

$0.501

$0.353

$0.290

DigiKey

USA . 3,956 parts In-Stock

1+ parts

$1.210

100+ parts

$0.501

1k+ parts

$0.353

10k+ parts

$0.273

3,956

$1.210

$0.501

$0.353

$0.273

Verical

USA . 33,000 parts In-Stock

1+ parts

-

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$0.257

33,000

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$0.257

Arrow

USA . 6,000 parts In-Stock

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$0.255

6,000

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$0.255

Distributors (In-Stock)

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Nova Conductors

Japan . 19 parts In-Stock

1+ parts

$0.357

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-

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19

$0.357

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Ozdisan Elektronik

Türkiye . 13,164 parts In-Stock

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$63.851

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13,164

$63.851

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Vyrian

USA . 330,910 parts In-Stock

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330,910

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IBS Electronics

USA . 72,000 parts In-Stock

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$0.337

72,000

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$0.337

Component Sense

UK . 70,419 parts In-Stock

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70,419

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NAC Semi

USA . 48,000 parts In-Stock

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$0.544

48,000

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$0.544

LIBRA Elektronik GmbH

Germany . 2,287 parts In-Stock

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2,287

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ComSIT Distribution GmbH

Germany . 1,589 parts In-Stock

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Speed Components Ltd

Israel . 900 parts In-Stock

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900

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ACDS - Activité Composants Distribution Service

France . 717 parts In-Stock

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717

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Distributors (Availability)

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Ampacity Inc.

Singapore . 524,470 parts In-Stock

1+ parts

$0.208

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524,470

$0.208

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Semicontronic

India . 524,451 parts In-Stock

1+ parts

$0.208

100+ parts

$0.203

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$0.202

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-

524,451

$0.208

$0.203

$0.202

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Aranea Global

USA . 2,000 parts In-Stock

1+ parts

$0.349

100+ parts

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$0.335

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2,000

$0.349

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$0.335

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Argo Parts USA

USA . 4,940 parts In-Stock

1+ parts

$0.357

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$0.346

4,940

$0.357

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$0.346

Continental Prestige Electronics

USA . 4,230 parts In-Stock

1+ parts

$0.357

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$0.349

4,230

$0.357

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$0.349

Aztec Data Supply Inc.

USA . 238 parts In-Stock

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$1.331

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238

$1.331

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Corohmni

South Africa . 255 parts In-Stock

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$1.430

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255

$1.430

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GreenTree Electronics

Israel . 162,000 parts In-Stock

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Eastek

USA . 138,000 parts In-Stock

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Perfect Parts

USA . 37,958 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 19,744 parts In-Stock

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Robosynatics

Brazil . 13,059 parts In-Stock

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$0.763

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$0.748

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$0.748

13,059

-

$0.763

$0.748

$0.748

Lucentia Tech

USA . 13,059 parts In-Stock

1+ parts

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$0.763

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$0.748

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$0.748

13,059

-

$0.763

$0.748

$0.748

Lixinc

USA . 5,733 parts In-Stock

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5,733

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iodParts Technologies Inc.

India . 2,782 parts In-Stock

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$0.462

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2,782

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Kepictronics

USA . 894 parts In-Stock

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894

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Cyclops Electronics Ltd (Excess)

UK . 717 parts In-Stock

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717

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Overview

Upgrade your power systems with the ZXTP2025FTA by Diodes Incorporated. As a leader in the industry, Diodes Incorporated ensures top-notch quality and reliability in every product they offer. The ZXTP2025FTA falls under the category of Power Bipolar Junction Transistors, making it ideal for switching applications. Its PNP configuration and small outline package make it a versatile choice for a wide range of projects. Experience the value and benefits of this high-performance transistor, with a maximum collector-emitter voltage of 50V and a peak reflow temperature of 260C. Trust Diodes Incorporated to deliver cutting-edge technology that meets your needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

PNP configuration offers high current gain and low output impedance, making it efficient for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and enhances reliability for better performance.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient and reliable operation.

Surface Mount: YES

Surface mount option allows for easy and efficient integration into electronic circuits.

Package Shape: RECTANGULAR

Rectangular shape helps in easy placement and space-saving in tight circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide a strong mechanical connection and high conductivity for improved performance.

No. of Terminals: 3

Three terminals offer versatility in circuit connections and provide multiple configuration options.

Package Style (Meter): SMALL OUTLINE

Small outline package style makes it suitable for compact designs with limited space.

Minimum DC Current Gain (hFE): 12

Minimum DC current gain of 12 ensures stable and consistent performance in various operating conditions.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, the product can withstand high temperatures for extended periods.

Maximum Collector-Emitter Voltage: 50 V

High voltage capacity of 50V allows for safe and reliable operation in different voltage scenarios.

Transistor Element Material: SILICON

Silicon material ensures high performance, low power consumption, and reliability in various applications.

Maximum Collector Current (IC): 5 A

With a maximum collector current of 5A, the transistor can handle high current loads effectively.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance for long-term reliability.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and connections, enhancing usability.

Peak Reflow Temperature °C: 260

Peak reflow temperature of 260°C ensures reliable solder joints during the manufacturing process.

Nominal Transition Frequency (fT): 190 MHz

High nominal transition frequency of 190MHz enables fast switching speeds for efficient operation.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTP2025FTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

12

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP2025FTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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