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ZXTP2012ZQTA

Diodes Incorporated

ZXTP2012ZQTA by Diodes Incorporated

ZXTP2012ZQTA by Diodes Inc. is a PNP BJT transistor with max VCE of 60V, IC of 4.3A, and hFE of 10. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and high transition frequency of 120MHz. It comes in a small outline package with matte tin finish, suitable for surface mount assembly.

Median Price

$1.064

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Element14

Singapore . 1,048 parts In-Stock

1+ parts

$0.958

100+ parts

$0.617

1k+ parts

$0.445

10k+ parts

-

1,048

$0.958

$0.617

$0.445

-

Farnell

UK . 1,048 parts In-Stock

1+ parts

$1.064

100+ parts

$0.593

1k+ parts

$0.449

10k+ parts

$0.395

1,048

$1.064

$0.593

$0.449

$0.395

DigiKey

USA . 308 parts In-Stock

1+ parts

$1.480

100+ parts

$0.620

1k+ parts

$0.442

10k+ parts

$0.345

308

$1.480

$0.620

$0.442

$0.345

Mouser Electronics

USA . 44 parts In-Stock

1+ parts

$1.480

100+ parts

$0.620

1k+ parts

$0.442

10k+ parts

-

44

$1.480

$0.620

$0.442

-

Verical

USA . 459,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.345

10k+ parts

-

459,000

-

-

$0.345

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Maritex

Poland . 15 parts In-Stock

1+ parts

$0.293

100+ parts

$0.223

1k+ parts

$0.186

10k+ parts

-

15

$0.293

$0.223

$0.186

-

Nova Conductors

Japan . 450 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

-

450

$0.426

-

-

-

IBS Electronics

USA . 97,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.596

10k+ parts

$0.568

97,000

-

-

$0.596

$0.568

Vyrian

USA . 66,592 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

66,592

-

-

-

-

NAC Semi

USA . 23,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.467

10k+ parts

-

23,000

-

-

$0.467

-

ComSIT Distribution GmbH

Germany . 845 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

845

-

-

-

-

ComSIT USA

USA . 845 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

845

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Semicontronic

India . 66,460 parts In-Stock

1+ parts

$0.293

100+ parts

$0.286

1k+ parts

$0.284

10k+ parts

-

66,460

$0.293

$0.286

$0.284

-

Argo Parts USA

USA . 3,510 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

$0.414

3,510

$0.426

-

-

$0.414

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$0.426

100+ parts

-

1k+ parts

-

10k+ parts

-

1,000

$0.426

-

-

-

Corohmni

South Africa . 26 parts In-Stock

1+ parts

$0.532

100+ parts

-

1k+ parts

-

10k+ parts

-

26

$0.532

-

-

-

Ampacity Inc.

Singapore . 77,076 parts In-Stock

1+ parts

$0.640

100+ parts

-

1k+ parts

-

10k+ parts

-

77,076

$0.640

-

-

-

Continental Prestige Electronics

USA . 1,190 parts In-Stock

1+ parts

$0.952

100+ parts

$0.585

1k+ parts

$0.348

10k+ parts

$0.329

1,190

$0.952

$0.585

$0.348

$0.329

Modulus Dynamics

Lithuania . 14,778 parts In-Stock

1+ parts

$1.421

100+ parts

$1.421

1k+ parts

$1.421

10k+ parts

-

14,778

$1.421

$1.421

$1.421

-

Authorized Procurement Solutions

USA . 90,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

90,000

-

-

-

-

Perfect Parts

USA . 56,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

56,000

-

-

-

-

Eastek

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.463

10k+ parts

-

1,000

-

-

$0.463

-

Overview

Experience the power of innovation with the ZXTP2012ZQTA by Diodes Incorporated. As a leading manufacturer in the industry, Diodes Incorporated delivers top-quality Power Bipolar Junction Transistors designed for switching applications. With its PNP polarity and single configuration, this transistor offers reliable performance and efficiency. Whether you're looking to enhance your electronic devices or optimize power management systems, the ZXTP2012ZQTA provides the value, benefits, and advantages you need for success. Trust Diodes Incorporated to deliver cutting-edge solutions for all your power transistor needs.

Feature Benefit Bullets

Package Body Material:

PLASTIC/EPOXY - Provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type:

PNP - Offers high current gain and fast switching speeds, ideal for switching applications.

Configuration:

SINGLE - Simplifies circuit design and makes installation easier.

Transistor Application:

SWITCHING - Ensures efficient power management and performance.

Surface Mount:

YES - Enables easy and secure PCB mounting, saving space and reducing assembly time.

Package Shape:

RECTANGULAR - Allows for a compact and efficient layout on the circuit board.

Terminal Form:

FLAT - Facilitates soldering and ensures reliable electrical connections.

No. of Terminals:

3 - Provides necessary connectivity for the transistor to function effectively.

Package Style (Meter):

SMALL OUTLINE - Offers a low-profile design and enhances heat dissipation capabilities.

Minimum DC Current Gain (hFE):

10 - Ensures stable and predictable amplification of current in the circuit.

Maximum Collector-Emitter Voltage:

60 V - Supports a wide range of voltage requirements in various applications.

Transistor Element Material:

SILICON - Provides high efficiency and reliability in performance.

Maximum Collector Current (IC):

4.3 A - Handles high current loads with ease, making it versatile for different applications.

Terminal Finish:

Matte Tin (Sn) - Provides corrosion resistance and enhances soldering capabilities.

Terminal Position:

SINGLE - Simplifies the transistor's installation and connection in the circuit.

Case Connection:

COLLECTOR - Ensures proper current flow and heat dissipation for optimal performance.

Maximum Time At Peak Reflow Temperature (s):

30 - Allows for efficient soldering without damaging the transistor.

Peak Reflow Temperature °C:

260 - Withstands high temperatures during soldering for robust performance.

Reference Standard:

AEC-Q101 - Meets automotive industry standards for reliability and quality.

Nominal Transition Frequency (fT):

120 MHz - Offers high-speed performance for demanding applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) ZXTP2012ZQTA attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from Diodes Incorporated

Specs

Additional Features:

HIGH RELIABILITY

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

10

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Reference Standard:

AEC-Q101

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

ZXTP2012ZQTA Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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